Review and comparison of layer transfer methods for two-dimensional materials for emerging applications

TF Schranghamer, M Sharma, R Singh… - Chemical Society …, 2021 - pubs.rsc.org
Two-dimensional (2D) materials offer immense potential for scientific breakthroughs and
technological innovations. While early demonstrations of 2D material-based electronics …

[HTML][HTML] Impact of phonon scattering mechanisms on the performance of silicene nanoribbon field-effect transistors

MW Chuan, MA Riyadi, A Hamzah, NE Alias… - Results in Physics, 2021 - Elsevier
Rigorous efforts are invested globally in the semiconductor industry to leverage next-
generation nanoelectronics beyond Moore's law. Among them, silicene is foreseen as a …

Device Performance of Double‐Gate Schottky‐Barrier Graphene Nanoribbon Field‐Effect Transistors with Physical Scaling

MW Chuan, MAI Misnon, NE Alias… - Journal of …, 2023 - Wiley Online Library
Moore's law is approaching its limit due to various challenges, especially the size limit of the
transistors. The International Roadmap for Devices and Systems (IRDS), the successor of …

Electronic transport properties of B/N/P co-doped armchair graphene nanoribbon field effect transistor

R Wen, Z Jiang, R Miao, L Wang, Y Liang… - Diamond and Related …, 2022 - Elsevier
On the basis of the Density functional theory (DFT) combined with non-equilibrium Green's
function (NEGF), we have investigated the application potential of the boron, nitrogen and …

Performance metrics of current transport in pristine graphene nanoribbon field-effect transistors using recursive non-equilibrium Green's function approach

KL Wong, MW Chuan, A Hamzah, S Rusli… - Superlattices and …, 2020 - Elsevier
Graphene nanoribbons (GNRs) are an emerging material for future nanoelectronic
applications. Because GNR fabrication technology is still in an early stage, modelling of …

Creation of step-shaped energy band in a novel double-gate GNRFET to diminish ambipolar conduction

MK Anvarifard, D Nirmal - IEEE Transactions on Electron …, 2021 - ieeexplore.ieee.org
The ambipolar conduction which is one of the serious obstacles in the development of the
graphene nanoribbon field-effect transistors (GNR-FETs) has been successfully controlled …

Semi-empirical DFT Based Investigation of Electronic and Quantum Transport Properties of Novel GS-AGNR (N) FET

R Chaujar - IEEE Transactions on Nanotechnology, 2024 - ieeexplore.ieee.org
In this article, the electronic and quantum transport properties for the bulk configuration of
armchair graphene nanoribbons (AGNRs) with varied number of carbon atoms along AGNR …

Quantum transport of doped rough-edged graphene nanoribbons FET based on TB-NEGF method

KL Wong, MW Chuan, A Hamzah, S Rusli… - Advances in nano …, 2024 - koreascience.kr
Graphene nanoribbons (GNRs) are considered a promising alternative to graphene for
future nanoelectronic applications. However, GNRs-based device modeling is still at an …

Strain Engineering of Graphene Nanoribbon Transistors Made Using Analytical Quasi-Ballistic Transport Model

G Kliros - Journal of Nano Research, 2021 - Trans Tech Publ
In this work, the impact of uniaxial strain on the current-voltage characteristics and the key
performance metrics of armchair graphene nanoribbon (AGNR) field-effect transistors (FETs) …

Design and Simulation of AlGaN/GaN High Electron Mobility Field-Effect Diode

T Ghafouri, N Manavizadeh, M Hosseini - Journal of Advanced Materials and …, 2021 - jamt.ir
Modern system-on-chip (SoC) designers are trying to include more considerations in
designing building blocks to present reliable integrated digital circuits as well as high …