Solution processed metal oxide high‐κ dielectrics for emerging transistors and circuits

A Liu, H Zhu, H Sun, Y Xu, YY Noh - Advanced Materials, 2018 - Wiley Online Library
The electronic functionalities of metal oxides comprise conductors, semiconductors, and
insulators. Metal oxides have attracted great interest for construction of large‐area …

High thermoelectric performance in Te-free (Bi, Sb) 2 Se 3 via structural transition induced band convergence and chemical bond softening

S Wang, Y Sun, J Yang, B Duan, L Wu… - Energy & …, 2016 - pubs.rsc.org
Semiconductors with converging multiple electronic valleys and soft chemical bonds are
ideal for high-performance thermoelectrics. Narrow gap Bi2Se3 is a well-known three …

Low‐temperature, nontoxic water‐induced metal‐oxide thin films and their application in thin‐film transistors

G Liu, A Liu, H Zhu, B Shin, E Fortunato… - Advanced Functional …, 2015 - Wiley Online Library
Here, a simple, nontoxic, and inexpensive “water‐inducement” technique for the fabrication
of oxide thin films at low annealing temperatures is reported. For water‐induced (WI) …

Water‐induced scandium oxide dielectric for low‐operating voltage n‐and p‐type metal‐oxide thin‐film transistors

A Liu, G Liu, H Zhu, H Song, B Shin… - Advanced Functional …, 2015 - Wiley Online Library
Solution‐processed metal‐oxide thin films based on high dielectric constant (k) materials
have been extensively studied for use in low‐cost and high‐performance thin‐film …

Low-temperature, nontoxic water-induced high-k zirconium oxide dielectrics for low-voltage, high-performance oxide thin-film transistors

C Zhu, A Liu, G Liu, G Jiang, Y Meng… - Journal of Materials …, 2016 - pubs.rsc.org
The fabrication of water-induced amorphous high-k zirconium oxide (ZrOx) dielectrics has
been proposed with the objective of achieving high performance and reducing costs for next …

Nontoxic, eco‐friendly fully water‐induced ternary Zr–Gd–O dielectric for high‐performance transistors and unipolar inverters

L Zhu, G He, W Li, B Yang, E Fortunato… - Advanced Electronic …, 2018 - Wiley Online Library
In this context, a simple, nontoxic, and eco‐friendly fully water‐induced (WI) route to
fabricate ternary ZrGdOx thin films at various annealing temperatures is reported. Annealing …

Synthesis of the 2D Ternary Topological Insulator Bi2‐xSbxSe3 with a Low Carrier Concentration and Ultrahigh Carrier Mobility

MZ Saeed, Z Zhang, H Zhang, B Qin… - Advanced Functional …, 2024 - Wiley Online Library
Highcarrier concentration and low mobility in Bi2Se3 hide thetopological surface states
(TSS). In the 2D ternary topological insulator (TI) Bi2–xSbxSe3, compensatory Sb doping …

Solution-processed high-k HfO 2 gate dielectric processed under softening temperature of polymer substrates

YB Yoo, JH Park, KH Lee, HW Lee, KM Song… - Journal of Materials …, 2013 - pubs.rsc.org
A low-temperature, solution-processed high-k HfO2 gate dielectric was demonstrated. To
decompose a hafnium precursor at a temperature lower than 200° C, an aqueous solution of …

Redox chloride elimination reaction: facile solution route for indium‐free, low‐voltage, and high‐performance transistors

A Liu, Z Guo, G Liu, C Zhu, H Zhu… - Advanced Electronic …, 2017 - Wiley Online Library
Solution‐processed oxide semiconductor and dielectric thin films have been widely studied
for achieving flexible, high‐performance, and low‐power electronics and circuits. In this …

Solution‐processed alkaline lithium oxide dielectrics for applications in n‐and p‐type thin‐film transistors

A Liu, G Liu, C Zhu, H Zhu, E Fortunato… - Advanced Electronic …, 2016 - Wiley Online Library
High‐k alkaline lithium oxide (LiOx) thin films are fabricated by spin‐coating method. The
LiOx thin films are annealed at different temperatures and characterized by various …