Design of E-and W-band low-noise amplifiers in 22-nm CMOS FD-SOI
This article presents E-and W-band low-noise amplifiers (LNA) in GlobalFoundries 22-nm
CMOS fully depleted silicon-on-insulator (FD-SOI). Both amplifiers employ a three-stage …
CMOS fully depleted silicon-on-insulator (FD-SOI). Both amplifiers employ a three-stage …
A Wideband E/W-Band Low-Noise Amplifier MMIC in a 70-nm Gate-Length GaN HEMT Technology
This article reports on a gallium-nitride (GaN) low-noise amplifier (LNA) monolithic
microwave integrated circuit (MMIC) with a 3-dB gain bandwidth (BW) from 63 to 101 GHz …
microwave integrated circuit (MMIC) with a 3-dB gain bandwidth (BW) from 63 to 101 GHz …
Design of a D-band CMOS amplifier utilizing coupled slow-wave coplanar waveguides
This paper validates a design and modeling methodology of coupled slow-wave
waveguides (CS-CPW) by presenting a D-band CMOS low-noise amplifier (LNA) that …
waveguides (CS-CPW) by presenting a D-band CMOS low-noise amplifier (LNA) that …
120-GHz 8-stage broadband amplifier with quantitative stagger tuning technique
A novel quantitative design method is proposed herein for a 120-GHz 8-stage broadband
amplifier using the stagger tuning technique. The pole frequencies of the unit amplifiers are …
amplifier using the stagger tuning technique. The pole frequencies of the unit amplifiers are …
Ultrawideband LNA 1960–2019
S Shahrabadi - IET Circuits, Devices & Systems, 2021 - Wiley Online Library
To the best of the author's knowledge, several studies during 1960–2019 were carried out
on wideband and ultrawideband LNAs just to render optimum LNAs for SAW‐less Radio …
on wideband and ultrawideband LNAs just to render optimum LNAs for SAW‐less Radio …
A 60–90-GHz CMOS Double-Neutralized LNA Technology With 6.3-dB NF and −10dBm P−1dB
D Pan, Z Duan, S Chakraborty, L Sun… - IEEE Microwave and …, 2019 - ieeexplore.ieee.org
This letter presents a CMOS millimeter-wave low-noise amplifier (LNA) with flat gain and
noise figure (NF) over the entire bandwidth of 60-90 GHz. The proposed double-neutralized …
noise figure (NF) over the entire bandwidth of 60-90 GHz. The proposed double-neutralized …
A W-band LNA/phase shifter with 5-dB NF and 24-mW power consumption in 32-nm CMOS SOI
M Sayginer, GM Rebeiz - IEEE Transactions on Microwave …, 2018 - ieeexplore.ieee.org
This paper presents a W-band phased array receive front end in 32-nm CMOS silicon-on-
insulator technology. The architecture is based on cascode low-noise amplifiers and passive …
insulator technology. The architecture is based on cascode low-noise amplifiers and passive …
CMOS low noise amplifier design for microwave and mmWave applications
XJ Li, YP Zhang - 2018 - dr.ntu.edu.sg
This paper reviews recent advances in the design of low noise amplifier (LNA) in
complementary metal oxide semiconductor (CMOS) technology for radio transceivers at …
complementary metal oxide semiconductor (CMOS) technology for radio transceivers at …
Analysis and design of a 55–74 GHz ultra‐compact low‐noise amplifier using highly asymmetric transformers
M Becker, H Morath, S Schumann… - Electronics Letters, 2022 - Wiley Online Library
This letter presents a low‐noise amplifier with a 3 dB‐bandwidth, from 55 to 74 GHz,
excellent noise performance and low power consumption based on a three‐stage common …
excellent noise performance and low power consumption based on a three‐stage common …
Cryogenic W-band SiGe BiCMOS low-noise amplifier
M Varonen, N Sheikhipoor… - 2020 IEEE/MTT-S …, 2020 - ieeexplore.ieee.org
In this paper we present the design, modeling, and on-wafer measurement results of an ultra-
wideband cryogenically cooled SiGe low-noise amplifier covering at least 71 to 116 GHz …
wideband cryogenically cooled SiGe low-noise amplifier covering at least 71 to 116 GHz …