From ferroelectric material optimization to neuromorphic devices
Due to the voltage driven switching at low voltages combined with nonvolatility of the
achieved polarization state, ferroelectric materials have a unique potential for low power …
achieved polarization state, ferroelectric materials have a unique potential for low power …
Recent progress on phase engineering of nanomaterials
As a key structural parameter, phase depicts the arrangement of atoms in materials.
Normally, a nanomaterial exists in its thermodynamically stable crystal phase. With the …
Normally, a nanomaterial exists in its thermodynamically stable crystal phase. With the …
Electrically Switchable Polarization in Bi2O2Se Ferroelectric Semiconductors
Atomically 2D layered ferroelectric semiconductors, in which the polarization switching
process occurs within the channel material itself, offer a new material platform that can drive …
process occurs within the channel material itself, offer a new material platform that can drive …
Recent developments of optoelectronic synaptic devices based on metal halide perovskites
Massive data processing with high computing efficiency and low operating power is required
owing to the rapid development of artificial intelligence and information technology …
owing to the rapid development of artificial intelligence and information technology …
Reconfigurable neuromorphic computing: Materials, devices, and integration
Neuromorphic computing has been attracting ever‐increasing attention due to superior
energy efficiency, with great promise to promote the next wave of artificial general …
energy efficiency, with great promise to promote the next wave of artificial general …
Realization of flexible in-memory computing in a van der Waals ferroelectric heterostructure tri-gate transistor
Combining logical function and memory characteristics of transistors is an ideal strategy for
enhancing computational efficiency of transistor devices. Here, we rationally design a tri …
enhancing computational efficiency of transistor devices. Here, we rationally design a tri …
Annealing-induced phase transformation in In 10 Se 70 Te 20 thin films and its structural, optical and morphological changes for optoelectronic applications
S Giri, P Priyadarshini, D Alagarasan, R Ganesan… - RSC …, 2023 - pubs.rsc.org
In2Se3 and In2Te3 have great importance in various device fabrications. The present report
is based on the annealing-induced phase formation of both In2Se3 and In2Te3 from …
is based on the annealing-induced phase formation of both In2Se3 and In2Te3 from …
Bidirectional synaptic phototransistor based on two-dimensional ferroelectric semiconductor for mixed color pattern recognition
Optoelectronic synaptic devices capable of processing multiwavelength inputs are critical for
neuromorphic vision hardware, which remains an important challenge. Here, we develop a …
neuromorphic vision hardware, which remains an important challenge. Here, we develop a …
Non-volatile tunable optics by design: from chalcogenide phase-change materials to device structures
D Wang, L Zhao, S Yu, X Shen, JJ Wang, C Hu… - Materials Today, 2023 - Elsevier
Integration of chalcogenide phase-change materials (PCMs) with planar multilayer
structures, metasurfaces, waveguides and photonic integrated circuits has sparked …
structures, metasurfaces, waveguides and photonic integrated circuits has sparked …
Bend-Induced Ferroelectric Domain Walls in α-In2Se3
The low bending stiffness of atomic membranes from van der Waals ferroelectrics such as α-
In2Se3 allow access to a regime of strong coupling between electrical polarization and …
In2Se3 allow access to a regime of strong coupling between electrical polarization and …