Silicon carbide power devices: Progress and future outlook
BJ Baliga - IEEE Journal of Emerging and Selected Topics in …, 2023 - ieeexplore.ieee.org
Silicon carbide (SiC) power devices have become commercialized and are being adopted
for many applications after 40 years of effort to produce large diameter wafers and high …
for many applications after 40 years of effort to produce large diameter wafers and high …
Vertical GaN merged PiN Schottky diode with a breakdown voltage of 2 kV
T Hayashida, T Nanjo, A Furukawa… - Applied Physics …, 2017 - iopscience.iop.org
In this study, we successfully fabricated vertical GaN merged PiN Schottky (MPS) diodes and
comparatively investigated the cyclic p-GaN width (W p) dependence of their electrical …
comparatively investigated the cyclic p-GaN width (W p) dependence of their electrical …
High-voltage SiC devices: diodes and MOSFETs
J Millán, P Friedrichs, A Mihaila, V Soler… - 2015 International …, 2015 - ieeexplore.ieee.org
This paper reviews recent achievements on high-voltage SiC-based devices aimed at Wind
Power and Solid-State Transformer applications. SiC diodes with voltage ranges between …
Power and Solid-State Transformer applications. SiC diodes with voltage ranges between …
Time/Current-Dependent Surge Current Capability of Fully-Vertical GaN-on-GaN PiN Diode With Conductivity Modulation
Bipolar-mode operation is essential for surge current ruggedness of diodes in high-power
applications. Different from indirect-bandgap Si and SiC, it's unclear whether hole injection …
applications. Different from indirect-bandgap Si and SiC, it's unclear whether hole injection …
Investigation of barrier inhomogeneities in Mo/4H–SiC Schottky diodes
Using current–voltage measurements, we have investigated the electrical behavior of
molybdenum on 4H–SiC Schottky diodes of various areas and having different edge …
molybdenum on 4H–SiC Schottky diodes of various areas and having different edge …
Repetitive-avalanche-induced electrical parameters shift for 4H-SiC junction barrier Schottky diode
The electrical parameters shift of 4H-SiC junction barrier Schottky diode under the repetitive
avalanche current stress has been experimentally investigated. Using technical computer …
avalanche current stress has been experimentally investigated. Using technical computer …
The effect of light ion irradiation on 4H-SiC MPS power diode characteristics: Experiment and simulation
In this article, the effect of local radiation damage on the electrical characteristics of 1700 V
4H-SiC Merged-Pin Schottky (MPS) diode have been investigated. Radiation defects …
4H-SiC Merged-Pin Schottky (MPS) diode have been investigated. Radiation defects …
[图书][B] Power microelectronics: device and process technologies
The global power semiconductor market size, according to the published forecasting data by
manufacturers, is likely to attain 30 billion US dollars in the year 2020. Within this segment …
manufacturers, is likely to attain 30 billion US dollars in the year 2020. Within this segment …
Analysis of breakdown-voltage increase on SiC junction barrier Schottky diode under negative bias stress
FY Jin, PH Chen, WC Hung, WC Hung… - … on Electron Devices, 2022 - ieeexplore.ieee.org
In this study, the increment in the breakdown voltage of a SiC junction barrier Schottky (JBS)
diode under negative bias stress (NBS) is investigated. However, when the SiC JBS exhibits …
diode under negative bias stress (NBS) is investigated. However, when the SiC JBS exhibits …
Fabrication and Characterization of Kilovolt p-Type SiC JBS Diodes with Enhanced Current Capability and Electroluminescence Phenomenon
Junction Barrier Schottky (JBS) Diodes are fabricated for the first time on p-type Silicon
Carbide (SiC) substrates with the avalanche breakdown voltage (BV) of 1200 V. The SiC p+ …
Carbide (SiC) substrates with the avalanche breakdown voltage (BV) of 1200 V. The SiC p+ …