Memory controllers comparing a difference between measured voltages with a reference voltage...

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Apparatuses and methods of reading memory cells

I Tortorelli, F Pellizzer, F Bedeschi - US Patent 10,255,975, 2019 - Google Patents
(57) ABSTRACT A method is provided for a reading memory even if there is a threshold
voltage in an overlapped threshold voltage (yTH) region between a first state distribution …
被引用次数：1 相关文章 所有 4 个版本
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Apparatuses and methods of reading memory cells

I Tortorelli, F Pellizzer, F Bedeschi - US Patent 10,062,433, 2018 - Google Patents
A method is provided for a reading memory even if there is a threshold voltage in an
overlapped threshold voltage (VTH) region between a first state distribution and a second …
被引用次数：1 相关文章 所有 4 个版本

Crossbar array apparatus and write method thereof

Y Tomita, M Yano - US Patent 11,676,662, 2023 - Google Patents
US11676662B2 - Crossbar array apparatus and write method thereof - Google Patents
US11676662B2 - Crossbar array apparatus and write method thereof - Google Patents …
相关文章 所有 4 个版本
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Apparatuses and methods of reading memory cells

I Tortorelli, F Pellizzer, F Bedeschi - US Patent 10,658,035, 2020 - Google Patents
A method is provided for a reading memory even if there is a threshold voltage in an
overlapped threshold voltage (VTH) region between a first state distribution and a second …
相关文章 所有 4 个版本