Roadmap on ferroelectric hafnia-and zirconia-based materials and devices
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
Dimensional scaling of ferroelectric properties of hafnia-zirconia thin films: Electrode interface effects
Hafnia-based ferroelectric (FE) thin films are promising candidates for semiconductor
memories. However, a fundamental challenge that persists is the lack of understanding …
memories. However, a fundamental challenge that persists is the lack of understanding …
Enhanced Switching Reliability of Hf0.5Zr0.5O2 Ferroelectric Films Induced by Interface Engineering
Ferroelectric materials have been widely researched for applications in memory and energy
storage. Among these materials and benefiting from their excellent chemical compatibility …
storage. Among these materials and benefiting from their excellent chemical compatibility …
Nanocrystallite seeding of metastable ferroelectric phase formation in atomic layer-deposited Hafnia–Zirconia alloys
Hafnia-based ferroelectric thin films are promising for semiconductor memory and
neuromorphic computing applications. Amorphous, as-deposited, thin-film binary alloys of …
neuromorphic computing applications. Amorphous, as-deposited, thin-film binary alloys of …
First Observation of Ultra-high Polarization (~ 108 μC/cm²) in Nanometer Scaled High Performance Ferroelectric HZO Capacitors with Mo Electrodes
We demonstrate, for the first time, excellent ferroelectricity, and endurance of 4 nm-thick and
65~nm*45~nm size Hf 0.5 Zr 0.5 O 2 (HZO) capacitors with Mo electrodes. We show 1) the …
65~nm*45~nm size Hf 0.5 Zr 0.5 O 2 (HZO) capacitors with Mo electrodes. We show 1) the …
Grain-size adjustment in Hf0. 5Zr0. 5O2 ferroelectric film to improve the switching time in Hf0. 5Zr0. 5O2-based ferroelectric capacitor
By adjusting the rising time in annealing ferroelectric HfO 2-based films, the grain size of the
film can be controlled. In this study, we found that increasing the rising time from 10 to 30 s at …
film can be controlled. In this study, we found that increasing the rising time from 10 to 30 s at …
Memory State Dynamics in BEOL FeFETs: Impact of Area Ratio on Analog Write Mechanisms and Charging
H Dahlberg, O Kaatranen, KM Persson… - IEEE …, 2025 - ieeexplore.ieee.org
This work presents dynamic state writing by combining ferroelectric (FE) polarization
together with charge injection (CI) on Si-based ferroelectric MOSFETs as a novel approach …
together with charge injection (CI) on Si-based ferroelectric MOSFETs as a novel approach …
Variability and Reliability Study of Nano-scale Hf0.5Zr0.5O2 Ferroelectric Devices Using O3 Treatment
Hf0. 5Zr0. 5O2 (HZO) faces challenges related to variability and reliability due to the
instability of ferroelectric phase crystallization. This instability exacerbates reliability issues …
instability of ferroelectric phase crystallization. This instability exacerbates reliability issues …
Realization of a composite ferroelectric characterization test system using a modified constant current method and a modified virtual ground method
DY Wang - Review of Scientific Instruments, 2024 - pubs.aip.org
ABSTRACT A composite ferroelectric characterization test system constructed using a
modified constant current method (CCM) and a modified virtual ground method (VGM) has …
modified constant current method (CCM) and a modified virtual ground method (VGM) has …
Understanding of polarization reversal and charge trapping under imprint in HfO2-FeFET by charge component analysis
Y Yoshimura, K Suzuki, R Ichihara… - Japanese Journal of …, 2024 - iopscience.iop.org
Polarization reversal and charge trapping under imprint in HfO 2-based ferroelectric FET
(FeFET) are studied by charge component analysis. By decomposing the effects of …
(FeFET) are studied by charge component analysis. By decomposing the effects of …