Polymorphism in post-dichalcogenide two-dimensional materials

H Bergeron, D Lebedev, MC Hersam - Chemical Reviews, 2021 - ACS Publications
Two-dimensional (2D) materials exhibit a wide range of atomic structures, compositions, and
associated versatility of properties. Furthermore, for a given composition, a variety of …

Recent breakthroughs in two-dimensional van der Waals magnetic materials and emerging applications

Y Khan, SM Obaidulla, MR Habib, A Gayen, T Liang… - Nano Today, 2020 - Elsevier
Abstract Two-dimensional (2D) magnetism is now the attention of central demands in
fundamental condensed matter physics concerning about the understanding and control of …

Manifestation of Topological Protection in Transport Properties of Epitaxial Thin Films

AA Taskin, S Sasaki, K Segawa, Y Ando - Physical review letters, 2012 - APS
The massless Dirac fermions residing on the surface of three-dimensional topological
insulators are protected from backscattering and cannot be localized by disorder, but such …

Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator BiSe

JG Checkelsky, YS Hor, RJ Cava, NP Ong - arXiv preprint arXiv …, 2010 - arxiv.org
We report a transport study of exfoliated few monolayer crystals of topological insulator Bi $
_2 $ Se $ _3 $ in an electric field effect (EFE) geometry. By doping the bulk crystals with Ca …

Crossover between weak antilocalization and weak localization in a magnetically doped topological insulator

M Liu, J Zhang, CZ Chang, Z Zhang, X Feng, K Li… - Physical review …, 2012 - APS
We report transport studies on magnetically doped Bi 2 Se 3 topological insulator ultrathin
films grown by molecular beam epitaxy. The magnetotransport behavior exhibits a …

Electrically tunable surface-to-bulk coherent coupling in topological insulator thin films

H Steinberg, JB Laloë, V Fatemi, JS Moodera… - Physical Review B, 2011 - APS
We study coherent electronic transport in charge-density-tunable microdevices patterned
from thin films of the topological insulator (TI) Bi 2 Se 3. The devices exhibit pronounced …

Thickness-dependent bulk properties and weak antilocalization effect in topological insulator BiSe

YS Kim, M Brahlek, N Bansal, E Edrey, GA Kapilevich… - Physical Review B, 2011 - APS
We show that a number of transport properties in topological insulator (TI) Bi 2 Se 3 exhibit
striking thickness dependences over a range of up to five orders of thickness (3 nm–170 …

Competition between weak localization and antilocalization in topological surface states

HZ Lu, J Shi, SQ Shen - Physical review letters, 2011 - APS
A magnetoconductivity formula is presented for the surface states of a magnetically doped
topological insulator. It reveals a competing effect of weak localization and weak …

Evidence for electron-electron interaction in topological insulator thin films

J Wang, AM DaSilva, CZ Chang, K He, JK Jain… - Physical Review B, 2011 - APS
We consider in our work single crystal thin films of Bi 2 Se 3, grown by molecular beam
epitaxy, both with and without Pb doping. Angle-resolved photoemission data demonstrate …

Tunable surface conductivity in BiSe revealed in diffusive electron transport

J Chen, XY He, KH Wu, ZQ Ji, L Lu, JR Shi, JH Smet… - Physical Review B, 2011 - APS
We demonstrate that the weak antilocalization effect can serve as a convenient method for
detecting decoupled surface transport in topological insulator thin films. In the regime where …