Epitaxial growth of metastable semiconductor alloys
GB Stringfellow - Journal of Crystal Growth, 2021 - Elsevier
The desire to access new alloys with desirable properties for semiconductor devices has
moved the field of semiconductor epitaxial growth into the region of metastable alloys, ie …
moved the field of semiconductor epitaxial growth into the region of metastable alloys, ie …
[HTML][HTML] Growth modes and chemical-phase separation in GaP1− xNx layers grown by chemical beam epitaxy on GaP/Si (001)
K Ben Saddik, S Fernández-Garrido, R Volkov… - Journal of Applied …, 2023 - pubs.aip.org
We investigated the chemical beam epitaxy of GaP 1− x N x grown on nominally (001)-
oriented Si substrates, as desired for the lattice-matched integration of optoelectronic …
oriented Si substrates, as desired for the lattice-matched integration of optoelectronic …
[HTML][HTML] Highly mismatched semiconductor alloys: From atoms to devices
W Walukiewicz, JMO Zide - Journal of Applied Physics, 2020 - pubs.aip.org
Alloying is one of the most powerful methods to broaden the range of application of
semiconductors. It has been successfully used to tailor the material properties such as …
semiconductors. It has been successfully used to tailor the material properties such as …
[HTML][HTML] A growth diagram for chemical beam epitaxy of GaP1− xNx alloys on nominally (001)-oriented GaP-on-Si substrates
The compound GaP 1− x N x is highly attractive to pseudomorphically integrate red-light
emitting devices and photovoltaic cells with the standard Si technology because it is lattice …
emitting devices and photovoltaic cells with the standard Si technology because it is lattice …
Growth modes and coupled morphological-compositional modulations in GaP1-xNx layers grown on nominally (001)-oriented Si substrates
KB Saddik, S Fernandez-Garrido, R Volkov… - arXiv preprint arXiv …, 2023 - arxiv.org
We investigated the chemical beam epitaxy of GaP1-xNx to correlate the growth parameters
with their properties when they are grown on nominally (001)-oriented Si substrates, as …
with their properties when they are grown on nominally (001)-oriented Si substrates, as …
On the Absorption Coefficient of Gap1-Xnx Layers and its Potential Application for Silicon Photovoltaics
K Ben Saddik, MJ Hernández, MÁ Pampillón… - María Jesús and … - papers.ssrn.com
The absorption coefficient and the energy gap of GaP1-xNx layers has been obtained by
spectroscopic ellipsometry for samples grown on Si (001) substrates by chemical beam …
spectroscopic ellipsometry for samples grown on Si (001) substrates by chemical beam …
[PDF][PDF] GaPAsN based short period superlattices for the integration of III-V solar cells on silicon
KB Saddik, R Volkov, NI Borgardt, MJ Hernández… - researchgate.net
The quaternary dilute-nitride compounds GaP1-xy AsyNx and Ga1-yInyP1-xNx are some of
the very few III-V materials that can be grown lattice-matched to Si with the ideal band gaps …
the very few III-V materials that can be grown lattice-matched to Si with the ideal band gaps …