Modeling and simulation of DC and microwave characteristics of AlInN (AlGaN)/AlN/GaN MOSHEMTs with different gate lengths

G Amarnath, DK Panda… - International Journal of …, 2019 - Wiley Online Library
In this paper, direct current (DC) and microwave characteristics are modeled and analyzed
for AlInN (AlGaN)/AlN/GaN metal‐oxide‐semiconductor high electron mobility transistors …