Distinct UV–visible responsivity enhancement of GaAs photodetectors via monolithic integration of antireflective nanopillar structure and UV absorbing IGZO layer

Y Liao, Y Zheng, SH Shin, ZJ Zhao, S An… - Advanced Optical …, 2022 - Wiley Online Library
Broadband ultraviolet–visible photodetection has been attracting growing research interests
in fields of environment, energy, and imaging. Considering the suitable bandgap and high …

Direct chemisorption-assisted nanotransfer printing with wafer-scale uniformity and controllability

ZJ Zhao, SH Shin, SY Lee, B Son, Y Liao, S Hwang… - ACS …, 2022 - ACS Publications
Nanotransfer printing techniques have attracted significant attention due to their outstanding
simplicity, cost-effectiveness, and high throughput. However, conventional methods via a …

Producing Microscale Ge Textures via Titanium Nitride‐and Nickel‐Assisted Chemical Etching with CMOS‐Compatibility

Y Liao, SH Shin, Y Jin, QJ Wang… - Advanced Materials …, 2021 - Wiley Online Library
As an emerging anisotropic wet etching technique, metal‐assisted chemical etching
(MacEtch) has been widely employed for fabricating nano‐and micro‐structures of …

Inverse metal-assisted chemical etching of germanium with gold and hydrogen peroxide

D Lidsky, JM Cain, T Hutchins-Delgado… - Nanotechnology, 2022 - iopscience.iop.org
Metal-assisted chemical etching (MACE) is a flexible technique for texturing the surface of
semiconductors. In this work, we study the spatial variation of the etch profile, the effect of …

Photoresponse enhancement in Ge MSM photodetector with Ge micropillar array

N Zhang, J Shao, Y Hao, Y Chen… - … on Electron Devices, 2023 - ieeexplore.ieee.org
Improving detection efficiency of Ge photodetector near the absorptance edge is crucial for
fiber-optic telecommunication. Here, we report the unique photodetection properties of …

[PDF][PDF] Germanium Single Crystals for Photonics

G Kropotov, V Rogalin, I Kaplunov - Crystals, 2024 - tydexoptics.com
Germanium (Ge) is a system-forming material of IR photonics for the atmospheric
transparency window of 8–14 µm. For optics of the 3–5 µm range, more widespread silicon …

Detection Properties of Ge MSM Photodetector Enhanced by Au Nanoparticles

N Zhang, Y Hao, J Shao, Y Chen, J Yan… - … on Electron Devices, 2023 - ieeexplore.ieee.org
A high-performance near-infrared (NIR) hybrid MSM Ge photodetector is proposed in this
work, and the properties of this device can be significantly enhanced by the hybrid structure …

Realization of smooth side profile using diffusion-controlled wet chemical etching for HgTe/(Hg, Cd) Te heterostructures

P Shekhar, K Bendias, L Fürst, X Liang… - …, 2023 - iopscience.iop.org
We utilize a diffusion-controlled wet chemical etching technique to fabricate microstructures
from two-dimensional HgTe/(Hg, Cd) Te-based topological insulators. For this purpose, we …

[HTML][HTML] Nanocarbon-assisted chemical etching of Ge (100) in H2O2

J Li, S Yamamoto, K Inagaki, K Arima - Electrochemistry Communications, 2024 - Elsevier
We utilized graphene oxide (GO) flakes as a starting material to conduct nanocarbon (NC)-
assisted chemical etching of Ge (1 0 0) surfaces in H 2 O 2 solutions. Upon initial etching in …

Efficient surface passivation of germanium nanostructures with 1% reflectance

TH Fung, J Isometsä, JP Lehtiö, TP Pasanen… - …, 2023 - iopscience.iop.org
Germanium (Ge) is a vital element for applications that operate in near-infrared
wavelengths. Recent progress in developing nanostructured Ge surfaces has resulted in> …