Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulation
The cubic form of SiC (β-or 3C-) compared to the hexagonal α-SiC polytypes, primarily 4H-
and 6H–SiC, has lower growth cost and can be grown heteroepitaxially in large area silicon …
and 6H–SiC, has lower growth cost and can be grown heteroepitaxially in large area silicon …
On the 3C-SiC/SiO2 n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating …
N Lophitis, A Arvanitopoulos… - … IEEE Workshop on …, 2022 - ieeexplore.ieee.org
Cubic (3C-) silicon carbide (SiC) metal oxide semiconductor (MOS) devices have the
potential to achieve superior performance and reliability. The effective channel mobility can …
potential to achieve superior performance and reliability. The effective channel mobility can …