Investigation on single pulse avalanche failure of 1200-V SiC MOSFETs via optimized thermoelectric simulation
Z Bai, X Tang, S Xie, Y He, H Yuan… - … on Electron Devices, 2021 - ieeexplore.ieee.org
The dynamic avalanche reliability of 1200-V silicon carbide (SiC) power metal-oxide
semiconductor field-effect transistors (MOSFETs) is studied in this article. The unclamped …
semiconductor field-effect transistors (MOSFETs) is studied in this article. The unclamped …
Investigation of failure mechanisms of 1200 V rated trench SiC MOSFETs under repetitive avalanche stress
X Deng, W Huang, X Li, X Li, C Chen… - IEEE transactions on …, 2022 - ieeexplore.ieee.org
In this article, the repetitive avalanche ruggedness of silicon carbide metal–oxide–
semiconductor field-effect transistors (MOSFETs) with asymmetric trench (AT) and double …
semiconductor field-effect transistors (MOSFETs) with asymmetric trench (AT) and double …
A 1200-V-class ultra-low specific on-resistance SiC lateral MOSFET with double trench gate and VLD technique
M Kong, Z Hu, J Gao, Z Chen… - IEEE Journal of the …, 2021 - ieeexplore.ieee.org
An ultra-low specific on-resistance 4H-SiC power laterally diffused metal oxide
semiconductor (LDMOS) device is proposed for 1200V-class applications. In the proposed …
semiconductor (LDMOS) device is proposed for 1200V-class applications. In the proposed …
A deep insight into the impact of bipolar degradations on avalanche robustness of 4H-SiC MOSFETs
K Li, P Sun, Z He, S Wu, Q Luo… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
The avalanche robustness of silicon carbide (SiC) metal–oxide–semiconductor field-effect
transistors (MOSFETs) is a crucial issue for their widespread applications, especially in the …
transistors (MOSFETs) is a crucial issue for their widespread applications, especially in the …
Impact of negative gate bias and inductive load on the single-pulse avalanche capability of 1200-V SiC trench MOSFETs
In this study, the single-pulse avalanche capability of two types of 1.2-kV silicon carbide
(SiC) trench MOSFETs was investigated through unclamped inductive switching (UIS) …
(SiC) trench MOSFETs was investigated through unclamped inductive switching (UIS) …
Investigations of UIS failure mechanism in 1.2 kV trench SiC MOSFETs using electro-thermal-mechanical stress analysis
In this study, the avalanche capabilities of 1.2 kV trench SiC MOSFETs were investigated
using unclamped inductive switching tests at various negative gate biases, and electro …
using unclamped inductive switching tests at various negative gate biases, and electro …
Investigation on the degradations of parallel-connected 4H-SiC MOSFETs under repetitive UIS stresses
Parallel devices in nonuniform conditions can easily lead to reduced overall reliability or
even failure due to uneven energy distribution. Especially under long-term avalanche …
even failure due to uneven energy distribution. Especially under long-term avalanche …
Investigations of short-circuit failure in double trench SiC MOSFETs through three-dimensional electro-thermal-mechanical stress analysis
In this study, the short-circuit failure mechanisms of 1.2 kV double trench SiC MOSFETs
were investigated by experiment and three-dimensional numerical TCAD simulation …
were investigated by experiment and three-dimensional numerical TCAD simulation …
4H-SiC-based ESD protection design with optimization of segmented LIGBT for high-voltage applications
KI Do, SH Jin, BS Lee, YS Koo - IEEE Journal of the Electron …, 2021 - ieeexplore.ieee.org
4H-SiC is a wide-bandgap material that exhibits excellent high-temperature conductivity and
high operating voltage. These characteristics can provide high electrostatic discharge (ESD) …
high operating voltage. These characteristics can provide high electrostatic discharge (ESD) …
A 4H-SiC MOSFET-based ESD protection with improved snapback characteristics for high-voltage applications
KI Do, JI Won, YS Koo - IEEE Transactions on Power …, 2020 - ieeexplore.ieee.org
A novel electrostatic discharge (ESD) protection device based on an n-type metal–oxide–
semiconductor field-effect transistor (NMOSFET) with segmented topology was proposed …
semiconductor field-effect transistor (NMOSFET) with segmented topology was proposed …