Measuring and understanding contact area at the nanoscale: a review

TDB Jacobs, A Martini - Applied Mechanics Reviews, 2017 - asmedigitalcollection.asme.org
The size of the mechanical contact between nanoscale bodies that are pressed together
under load has implications for adhesion, friction, and electrical and thermal transport at …

[HTML][HTML] Scanning probe microscopy in the age of machine learning

MA Rahman Laskar, U Celano - APL Machine Learning, 2023 - pubs.aip.org
Scanning probe microscopy (SPM) has revolutionized our ability to explore the nanoscale
world, enabling the imaging, manipulation, and characterization of materials at the atomic …

Charge disproportionate molecular redox for discrete memristive and memcapacitive switching

S Goswami, SP Rath, D Thompson, S Hedström… - Nature …, 2020 - nature.com
Electronic symmetry breaking by charge disproportionation results in multifaceted changes
in the electronic, magnetic and optical properties of a material, triggering ferroelectricity …

True atomic-resolution surface imaging and manipulation under ambient conditions via conductive atomic force microscopy

SA Sumaiya, J Liu, MZ Baykara - ACS nano, 2022 - ACS Publications
A great number of chemical and mechanical phenomena, ranging from catalysis to friction,
are dictated by the atomic-scale structure and properties of material surfaces. Yet, the …

High‐Frequency Light Rectification by Nanoscale Plasmonic Conical Antenna in Point‐Contact‐Insulator‐Metal Architecture

R Mupparapu, J Cunha, F Tantussi… - Advanced Energy …, 2022 - Wiley Online Library
Numerous efforts have been undertaken to develop rectifying antennas operating at high
frequencies, especially dedicated to light harvesting and photodetection applications …

[图书][B] The atomic force microscopy for nanoelectronics

U Celano - 2019 - Springer
The invention of scanning tunneling microscopy (STM), rapidly followed by atomic force
microscopy (AFM), occurred at the time when extensive research on sub-µm metal oxide …

Direct probing of the dielectric scavenging-layer interface in oxide filamentary-based valence change memory

U Celano, J Op de Beeck, S Clima… - … applied materials & …, 2017 - ACS Publications
A great improvement in valence change memory performance has been recently achieved
by adding another metallic layer to the simple metal–insulator–metal (MIM) structure. This …

Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories

U Celano, G Giammaria, L Goux, A Belmonte… - Nanoscale, 2016 - pubs.rsc.org
The electrochemical reactions triggering resistive switching in conductive-bridge resistive
random access memory (CBRAM) are spatially confined in few tens of nm3. The formation …

Investigation of the endurance of FE-HfO2 devices by means of TDDB studies

K Florent, A Subirats, S Lavizzari… - 2018 IEEE …, 2018 - ieeexplore.ieee.org
Ferroelectric HfO 2 devices are potential candidates for non-volatile memory applications.
However, they often exhibit a pinched hysteresis, which requires the application of cycles to …

[HTML][HTML] 3D structure–property correlations of electronic and energy materials by tomographic atomic force microscopy

J Song, Y Zhou, BD Huey - Applied Physics Letters, 2021 - pubs.aip.org
The ever-increasing complexity in the structure and design of functional materials systems
and devices necessitates new imaging approaches with 3D characterization capabilities …