This paper reviews the rapid advancements being made in the development of high electron
mobility transistors (HEMTs) on InP substrates for future sub-millimetre wave (30–300 GHz) …

Abstract Tunnel Field Effect Transistors (TFETs) have emerged as serious contenders for the
replacement of traditional MOSFET technology for the future ultra low power Analog/Digital …

A subthreshold analytical model for Dual Material Double Gate Junctionless Tunnel FET
(DMDG JLTFET) is developed. To analyze the behavior of short channel device, relevant …

In this paper, the RF and DC performance of AlGaN/GaN HEMT having p-type doping in
GaN buffer layer was analysed. Novelty of this work lies in the inclusion of P-type doping in …

Following the introduction of metamorphic high electron mobility transistors (MHEMTs) 30
years back, there has been a rapid growth in their use in advanced MMIC (monolithic …

Since the discovery of graphene, two-dimensional (2D) materials have been widely applied
to field-effect transistors due to their great potential in optoelectronics, photodetectors …

In this paper, the drain current collapse in AlGaN/GaN High Electron Mobility Transistor
(HEMT) with field plate engineering is investigated. A small signal equivalent circuit of …

In the recent times, the performance of MOSFET in the nanoscaled region attains
improvisations through several alternative device structures. Amongst many advanced …

In this article, a two dimensional (2-D) threshold voltage modeling based gate and channel
engineering are developed analytically for Dual Halo Gate Stacked Triple Material Dual …

In this research work, Amorphous Indium–Gallium–Zinc–Oxide (α-IGZO) thin-film transistor
consisting of Tri-Active Layer (TAL) channel have been designed in a double-gate structure …