Traveling wave electrode design for ultra compact carrier-injection HBT-based electroabsorption modulator in a 130nm BiCMOS process
E Fu, VJ Koomson, P Wu… - Smart Photonic and …, 2014 - spiedigitallibrary.org
Silicon photonic system, integrating photonic and electronic signal processing circuits in low-
cost silicon CMOS processes, is a rapidly evolving area of research. The silicon …
cost silicon CMOS processes, is a rapidly evolving area of research. The silicon …
140 Gb/s serializer using clock doublers in 90 nm SiGe technology
R Clarke, MR LeRoy, S Raman… - IEEE Journal of Solid …, 2015 - ieeexplore.ieee.org
Many design challenges exist in achieving high frequency clocking for high-speed
applications. This paper describes a new clock distribution technique and clocking approach …
applications. This paper describes a new clock distribution technique and clocking approach …
Monolithic ultra‐low‐power 6 Gbit/s inductorless PRBS generator for silicon HBT‐based carrier‐injection electro‐absorption modulator
E Fu, VJ Koomson - Electronics Letters, 2015 - Wiley Online Library
A low‐power pseudo‐random bit sequence (PRBS) generator for testing a high‐speed
optical transmitter module has been realised in a 130 nm bipolar CMOS process. The …
optical transmitter module has been realised in a 130 nm bipolar CMOS process. The …
[PDF][PDF] 一种新型Si/SiGe/Si 双异质结PIN 电学调制结构的异质结能带分析
冯松， 薛斌， 李连碧， 翟学军， 宋立勋， 朱长军 - 物理学报, 2015 - wulixb.iphy.ac.cn
PIN 结构是电光调制器中常见的一种电学调制结构, 该结构中载流子注入效率直接影响着电光
调制器的性能. 在前期的研究中, 我们在SOI 材料的基础上提出了一种新型Si/SiGe/Si …
调制器的性能. 在前期的研究中, 我们在SOI 材料的基础上提出了一种新型Si/SiGe/Si …
Silicon electro-optic modulators using quantum tunneling structures
P Wu, J Novak, L Jiang, Z Rena Huang - Journal of Lightwave …, 2015 - opg.optica.org
Injection-type silicon electro-optic modulators are widely used in onchip optical
interconnections due to its high modulation efficiency. However, as the modulator dimension …
interconnections due to its high modulation efficiency. However, as the modulator dimension …
A novel approach for justification of box-triangular germanium profile in SiGe HBTs
G Khanduri, B Panwar - Journal of Semiconductors, 2015 - iopscience.iop.org
This work presents a unique and robust approach for validation of using the box-triangular
germanium profile in the base of SiGe heterojunction bipolar transistors, where the …
germanium profile in the base of SiGe heterojunction bipolar transistors, where the …
CMOS-compatible silicon electro-optic modulator
J Wang, J Wang - CMOS-compatible key engineering devices for high …, 2019 - Springer
In this chapter, we have studied the pure silicon electro-optic modulation devices compatible
with CMOS process. First, the latest development of pure electro-optic modulator based on …
with CMOS process. First, the latest development of pure electro-optic modulator based on …
Monolithic low-power 6-gb/s optical transmitter for a silicon hbt-based carrier injection electroabsorption modulator
E Fu, P Wu, ZR Huang… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
Photonic devices monolithically integrated with nanoscale electronic signal processing
circuitry in silicon are emerging as a disruptive technology to reduce cost and improve …
circuitry in silicon are emerging as a disruptive technology to reduce cost and improve …
[图书][B] High-speed serial circuits using SiGe HBT BiCMOS technology
R Clarke - 2015 - search.proquest.com
High speed serial communication continues to be in high demand to keep up with the ever-
increasing digital communication circuits, which in all practically, leads to higher demand of …
increasing digital communication circuits, which in all practically, leads to higher demand of …
High-speed stacked tunneling PiN electro-optical modulators
High-speed stacked tunneling PiN electro-optical modulators Page 1 High-Speed Stacked
Tunneling PiN Electro-Optical Modulators Pengfei Wu1, Michael Shur1, 2, and Zhaoran Rena …
Tunneling PiN Electro-Optical Modulators Pengfei Wu1, Michael Shur1, 2, and Zhaoran Rena …