We review results on the optical injection of dual state InAs quantum dot-based
semiconductor lasers. The two states in question are the so-called ground state and first …

We study a passively mode-locked semiconductor ring laser subject to optical feedback from
an external mirror. Using a delay differential equation model for the mode-locked laser, we …

We experimentally and numerically study the amplitude stability of an InAs/InGaAs quantum
dot laser emitting simultaneously on ground states (GSs) and excited state (ESs) at center …

A delay differential equation-based model for passive mode locking in semiconductor lasers
is shown to offer a powerful and versatile mathematical framework to simulate quantum-dot …

We calculate the light-current characteristic (LCC) of a quantum dot (QD) laser under the
conditions of both direct and indirect capture of carriers from the optical confinement layer …

In the most general sense, mode locking (ML) is a regime of laser operation that involves
emitting light in several modes with a time-independent relation between them, ie, with …

Monolithic passively mode-locked quantum dot lasers with excited-state transition were
investigated in a broad operating range without ground-state lasing. Optical and electrical …

We present a study of the generation of subterahertz pulses in multi-section quantum dot
(QD) ring lasers based on an improved version of the well-established delayed differential …

We present a study of the generation of sub-terahertz pulses in multi-section quantum dot
ring lasers, based on an improved version of the well-established multi-section delayed …

We present a systematic investigation of the passively mode-locked (ML) quantum dot lasers
using a Finite Difference Traveling Wave model. Device structural parameters, such as the …