Admittance spectroscopy combined with non-ionizing energy loss (NIEL) analysis is shown
to be a powerful tool for analyzing solar cell radiation degradation, not relying on the change …

The displacement damage dose (DDD) is a common index used to predict the life of
semiconductor devices employed in space-based environments where they will be exposed …

CdZnTe (CZT) is an II–VI compound semiconductor with a zinc blende structure and has a
wide range of applications in nuclear radiation detectors. As the device size becomes …

We have employed large-scale molecular dynamics simulations to study defect production,
clustering, and its evolution in GaN for energies of a primary knock-on atom ranging from …

Understanding the generation and evolution of defects induced in matter by ion irradiation is
of fundamental importance to estimate the degradation of functional properties of materials …

A molecular dynamics (MD) method, along with the analytical bond-order potential, is
applied to study defect production in InAs. This potential is modified to obtain a better …

Molecular dynamics (MD) is used to simulate cascade collision in gallium arsenide (GaAs)
under different temperatures (300–900 K). During the entire simulation, the primary knock …

Displacement damage induced by space radiation is still a considerable challenge of
expanding application of GaAs-based devices (eg solar cell, et al.) in space missions. In the …

During the MURI performance period we completed a diverse portfolio of world-class
research projects. We made remarkable progress in all major topics encompassed by the …

In this paper, the effect of electron irradiation fluence on direct current (DC) and radio
frequency (RF) of InP-based high electron mobility transistors (HEMTs) was investigated …