Monolithic 3D integration as a pathway to energy-efficient computing and beyond: From materials and devices to architectures and chips
As emerging technologies like artificial intelligence (AI) and big data continue to evolve, the
demand for high-performance computing (HPC) has been increasing, driving the …
demand for high-performance computing (HPC) has been increasing, driving the …
Back-end-of-line-compatible scaled InGaZnO transistors by atomic layer deposition
In this work, we report on back-end-of-line (BEOL)-compatible InGaZnO indium gallium zinc
oxide (IGZO) thin film transistors (TFTs) with extreme scaled device dimension including …
oxide (IGZO) thin film transistors (TFTs) with extreme scaled device dimension including …
Study of contact resistance components in short-channel indium-gallium-zinc-oxide transistor
Contact resistance () is a major limitation to the scaling of amorphous indium-gallium-zinc-
oxide (a-IGZO) transistors, and it has not been thoroughly investigated on devices with sub …
oxide (a-IGZO) transistors, and it has not been thoroughly investigated on devices with sub …
Contact Length Scaling in Dual-Gate IGZO TFTs
Z Wu, J Niu, C Lu, Z Bai, K Chen, Z Wu… - IEEE Electron …, 2024 - ieeexplore.ieee.org
In this work, the contact length scaling in dual-gate (DG) InGaZnO (IGZO) thin film transistors
(TFTs) was experimentally investigated. With source/drain metal of Nickel (Ni) deposited in …
(TFTs) was experimentally investigated. With source/drain metal of Nickel (Ni) deposited in …
Deep-Submicron Channel Length Oxide Semiconductor Thin-Film Transistors Enabled by Self-Aligned Nanogap Lithography
This study presents the fabrication of oxide semiconductor thin-film transistors (TFTs) with a
channel length of 60 nm, which is made possible through self-aligned nanogap lithography …
channel length of 60 nm, which is made possible through self-aligned nanogap lithography …
IGZO-Based High-Performance Asymmetrical Negative-Capacitance Tunneling FET With Ti Low Schottky Barrier Contact
S Wang, YH Shao, B Qian, Q Sun… - … on Electron Devices, 2024 - ieeexplore.ieee.org
With the advance of Moore's law and the continuous updating of nodes, the physical limits of
silicon-based devices make negative-capacitance transistors become a trend. Tunneling …
silicon-based devices make negative-capacitance transistors become a trend. Tunneling …
High-Voltage Amorphous InGaZnO Thin-Film Transistors With ITO-Modulated Offset Region
G Yang, W Song, Z Yu, T Huang, J Cao… - … on Electron Devices, 2024 - ieeexplore.ieee.org
This study presents the high-voltage (HV) amorphous InGaZnO (a-IGZO) thin-film transistors
(TFTs) with an offset region modulated by the indium–tin oxide (ITO) capping layer (ICL) …
(TFTs) with an offset region modulated by the indium–tin oxide (ITO) capping layer (ICL) …
In-poor IGZO: superior resilience to hydrogen in forming gas anneal and PBTI
Integrating In-Ga-Zn-oxide (IGZO) channel transistors in silicon-based ecosystems requires
the resilience of the channel material to hydrogen treatment. Standard IGZO, containing 40 …
the resilience of the channel material to hydrogen treatment. Standard IGZO, containing 40 …
Highly Scaled BEOL-Compatible Thin Film Transistors With Ultrathin Atomic Layer Deposited Indium–Tin–Zinc–Oxide Channel
YK Liang, JY Zheng, YL Lin, YC Lu… - … on Electron Devices, 2024 - ieeexplore.ieee.org
In this article, we have demonstrated the utilization of innovative atomic-layer-deposited
(ALD) ultrathin (~ 1.8 nm) amorphous InSnZnO (-ITZO) channel material in the development …
(ALD) ultrathin (~ 1.8 nm) amorphous InSnZnO (-ITZO) channel material in the development …
Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress
Recently, a-IGZO has advanced toward the next-generation electronics system because of
its compatibility with complementary metal oxide semiconductor (CMOS) and back-end-of …
its compatibility with complementary metal oxide semiconductor (CMOS) and back-end-of …