Negative capacitance gives rise to subthreshold swing (SS) below the fundamental limit by
efficient modulation of surface potential in transistors. While negative‐capacitance transition …

This study explores the optimization of a hetero-dielectric tunnel field-effect transistor
(HDTFET) structure to improve device performance. By incorporating a high-k oxide pocket …

A tunnel field-effect transistor (TFET) activated by a quantum band-to-band tunneling
mechanism has encouraged the acceleration of nanodevices owing to its capability to beat …

This study presents a gate-all-around InAs–Si vertical tunnel field-effect transistor with a
triple metal gate (VTG-TFET). We obtained improved switching characteristics for the …

Since the introduction of fast integrated circuits, semiconductor manufacturers have
concentrated their efforts on reducing the size of transistors. Increased working frequencies …

Tunneling FET (TFET) has been demonstrated as a favorable candidate to replace
conventional MOSFETs in low-power applications. However, there are many challenges that …

This article offers a comprehensive noise analysis of a GaAs 0.2 Sb 0.8/GaSb heterojunction
Source-All-Around Vertical Tunnel FET (SAA-VTFET), examining generation-recombination …

This work presents a detailed TCAD investigation of the double-source vertical junction
tunneling field-effect transistor (DSV-TFET) by ferroelectric gate oxide material (FE-DSV …

TFET accurate physically based models are highly required to analyze and predict the
device characteristics for its future utilization in circuits. In order to precisely model TFETs, it …

In this paper, a SiGe/Si heterojunction inductive line tunneling tunnel field-effect transistor
with source Schottky contact (SC HJLT-iTFET) is proposed and investigated by the …