We present a model for the effect of thermal annealing on a single-layer InAs/GaAs quantum
dot (QD) heterostructure and study the corresponding variation in full photoluminescence …

The double-capping procedure has been widely used to control the size distribution of self-
assembled InAs/InGaAsP quantum dots during the growth on a (001) InP substrate …

The understanding of local charge trapping on the nanoscale is crucial for the design of
novel electronic devices and photodetectors based on SiGe nanoclusters (NCs). Here, the …

Semiconducting nanowires are expected to have applications in various areas as
transistors, sensors, resonators, solar cells, and thermoelectric systems. Understanding the …

An analysis of the effects of rapid thermal annealing on the photoluminescence spectrum of
InAs/In 0.15 Ga 0.85 As/GaAs Quantum dot-in-a-well heterostructures is presented. The …

We have used a direct x-ray phasing method, coherent Bragg rod analysis, to obtain sub-
angstrom resolution electron density maps of the InAs/GaAs dot system. The dots were …

We investigate the influence of strain and dislocations on band alignment in GaSb/GaAs
quantum dot systems. Composition profiles from cross-sectional scanning tunneling …

In recent years, epitaxial growth of self-assembled quantum dots has offered a way to
incorporate new properties into existing solid state devices. Although the droplet …

Unstrained GaAs quantum dots are promising candidates for quantum information devices
due to their optical properties, but their electronic properties have remained relatively …

This chapter briefly describes the fundamentals of high-resolution electron microscopy
techniques. In particular, the Peak Pairs approach for strain mapping with atomic column …