Excitation dependent Raman studies of self-seeded grown InN nanoparticles with different carrier concentration
High quality InN nanoparticles are grown using an atmospheric chemical vapour deposition
technique via a self-seeded catalytic approach in the temperature range of 580–650° C. In …
technique via a self-seeded catalytic approach in the temperature range of 580–650° C. In …
Passivation of Surface States of AlGaN Nanowires Using H3PO4 Treatment To Enhance the Performance of UV-LEDs and Photoanodes
Surface states serve as additional charge-carrier-trapping centers and create an energy
barrier at the semiconductor–electrolyte interface. This in turn may severely reduce the …
barrier at the semiconductor–electrolyte interface. This in turn may severely reduce the …
Effect of strain relaxation and the Burstein–Moss energy shift on the optical properties of InN films grown in the self-seeded catalytic process
For the first time, high optical quality InN films were grown on a sapphire substrate using the
atmospheric chemical vapour deposition technique in the temperature range of 560–650° C …
atmospheric chemical vapour deposition technique in the temperature range of 560–650° C …
Optical properties of monodispersed AlGaN nanowires in the single-prong growth mechanism
Growth of monodispersed AlGaN nanowires of ternary wurtzite phase is reported using the
chemical vapor deposition technique in the vapor–liquid–solid process. The role of …
chemical vapor deposition technique in the vapor–liquid–solid process. The role of …
Far field photoluminescence imaging of single AlGaN nanowire in the sub‐wavelength scale using confinement of polarized light
Till now the nanoscale focusing and imaging in the sub‐diffraction limit is achieved mainly
with the help of plasmonic field enhancement by confining the light assisted with noble metal …
with the help of plasmonic field enhancement by confining the light assisted with noble metal …
One step growth of GaN/SiO2 core/shell nanowire in vapor-liquid-solid route by chemical vapor deposition technique
GaN/SiO 2 core/shell nanowires are grown by cobalt phthalocyanine catalyst assisted vapor-
liquid-solid route, in which Si wafer coated with a mixture of gallium and indium is used as …
liquid-solid route, in which Si wafer coated with a mixture of gallium and indium is used as …
Far field photoluminescence imaging of single AlGaN nanowire in the sub-diffraction length scale using optical confinement of polarized light
AK Sivadasan, M Sardar, S Dhara - arXiv preprint arXiv:1605.03346, 2016 - arxiv.org
Till now the nanoscale focussing and imaging in the sub-diffraction limit is achieved mainly
with the help of plasmonic field enhancement assisted with noble metal nanoparticles. Using …
with the help of plasmonic field enhancement assisted with noble metal nanoparticles. Using …