[HTML][HTML] Developing silicon carbide for quantum spintronics

NT Son, CP Anderson, A Bourassa, KC Miao… - Applied Physics …, 2020 - pubs.aip.org
In current long-distance communications, classical information carried by large numbers of
particles is intrinsically robust to some transmission losses but can, therefore, be …

Quantum information processing with integrated silicon carbide photonics

S Majety, P Saha, VA Norman… - Journal of Applied Physics, 2022 - pubs.aip.org
Color centers in wide bandgap semiconductors are prominent candidates for solid-state
quantum technologies due to their attractive properties including optical interfacing, long …

Identification and tunable optical coherent control of transition-metal spins in silicon carbide

T Bosma, GJJ Lof, CM Gilardoni, OV Zwier… - npj Quantum …, 2018 - nature.com
Color centers in wide-bandgap semiconductors are attractive systems for quantum
technologies since they can combine long-coherent electronic spin and bright optical …

Role of screening in the density functional applied to transition-metal defects in semiconductors

V Ivády, IA Abrikosov, E Janzén, A Gali - Physical Review B—Condensed …, 2013 - APS
We study selected transition-metal-related point defects in silicon and silicon carbide
semiconductors by a range-separated hybrid density functional (HSE06). We find that …

Asymmetric Split-Vacancy Defects in SiC Polytypes: A Combined<? format?> Theoretical and Electron Spin Resonance Study

V Ivady, A Gällström, NT Son, E Janzén, A Gali - Physical review letters, 2011 - APS
Transition metal defects were studied in different polytypes of silicon carbide (SiC) by ab
initio supercell calculations. We found asymmetric split-vacancy (ASV) complexes for these …

Optical properties and Zeeman spectroscopy of niobium in silicon carbide

A Gällström, B Magnusson, S Leone, O Kordina… - Physical Review B, 2015 - APS
The optical signature of niobium in the low-temperature photoluminescence spectra of three
common polytypes of SiC (4H, 6H, and 15R) is observed and confirms the previously …

Near-Infrared Luminescent Centers in Silicon Carbide

IG Ivanov, NT Son - Handbook of Silicon Carbide Materials and …, 2023 - taylorfrancis.com
Silicon carbide (SiC) has long been developed for applications in power devices and is the
only wide-bandgap semiconductor with commercially available substrates of all types, high …

Two-laser spectroscopy and coherent manipulation of color-center spin ensembles in silicon carbide

OV Zwier - 2016 - research.rug.nl
To build quantum applications that outperform their current-day, classical counterparts (for
example, unbreakable encryption, or exponentially faster computation), we require better …

[图书][B] Development of theoretical approaches for post-silicon information processing

V Ivády - 2016 - books.google.com
Despite knowing the fundamental equations in most of the physics research areas, still there
is an unceasing need for theoretical method development, thanks to the more and more …

[图书][B] On-Chip Photonic Devices for Coupling to Color Centers in Silicon Carbide

C Wang - 2020 - search.proquest.com
Optical quantum networks are important for global use of quantum computers, and secure
quantum communication. Those networks require storage devices for synchronizing or …