The process of impurity‐induced layer disordering (IILD) or layer intermixing, in Al x Ga1− x
As‐GaAs quantum well heterostructures (QWHs) and superlattices (SLs), and in related III‐V …

Recently developed methods for growing epitaxial layers of semiconductors have included
the ability to exercise independent and spatial control over both the semiconductor band …

Data are presented showing that the Al‐Ga interdiffusion coefficient (D Al‐Ga) for an Al x
Ga1− x As‐GaAs quantum‐well heterostructure, or a superlattice, is highly dependent upon …

The intermixing of AlAs‐GaAs superlattices has been investigated as a function of Si
concentration following anneals in the range of 500 to 900° C. The superlattice samples …

Various applications of quantum-well intermixing, ranging from multiwavelength lasers to
complex photonic integrated circuits, are described. The fabrication of these GaAs-AlGaAs …

Data are presented showing that layer disordering of Al x Ga1− x As‐GaAs quantum well
heterostructures (QWH's) or superlattices (SL's) via ion implantation can be effected with a …

Two different quantum well heterostructure wafers are used to fabricate buried‐
heterostructure Al x Ga1− x As‐GaAs quantum well lasers using Si‐induced layer …

The effects of Si ion implantation and annealing on AlAs‐GaAs superlattices are examined
with secondary ion mass spectrometry (SIMS), Rutherford backscattering spectrometry …

Photoluminescence measurements on a. nnealed single~ wen AlxGal_xAs~ GaAs quantum
wen heterostructures demonstrate that layer disordering caused by native defects is strongly …

The use of Si diffusion and impurity-induced layer disordering, via a Si3N4 mask pattern, to
construct stripe-geometry AI" Ga. _xAs-GaAs quantum well heterostructure lasers on n-type …