Review of systematic tendencies in (001),(011) and (111) surfaces using B3PW as well as B3LYP computations of BaTiO3, CaTiO3, PbTiO3, SrTiO3, BaZrO3, CaZrO3 …

RI Eglitis, R Jia - Materials, 2023 - mdpi.com
We performed B3PW and B3LYP computations for BaTiO3 (BTO), CaTiO3 (CTO), PbTiO3
(PTO), SrTiO3 (STO), BaZrO3 (BZO), CaZrO3 (CZO), PbZrO3 (PZO) and SrZrO3 (SZO) …

[HTML][HTML] Fabrication and photonic applications of Si-integrated LiNbO3 and BaTiO3 ferroelectric thin films

Y Wen, H Chen, Z Wu, W Li, Y Zhang - APL Materials, 2024 - pubs.aip.org
Silicon, renowned for its applications in electronic circuits, also offers significant advantages
in the realm of integrated optics. While silicon does have inherent limitations in fabricating …

[HTML][HTML] Epitaxial integration of BaTiO3 on Si for electro-optic applications

W Guo, AB Posadas, AA Demkov - … of Vacuum Science & Technology A, 2021 - pubs.aip.org
BaTiO 3 (BTO) is a highly promising material for the fabrication of electro-optic (EO)
modulators due to the large effective Pockels coefficient of the material, particularly in an …

Exploring new approaches towards the formability of mixed-ion perovskites by DFT and machine learning

H Park, R Mall, FH Alharbi, S Sanvito… - Physical Chemistry …, 2019 - pubs.rsc.org
Recent years have witnessed a growing effort in engineering and tuning the properties of
hybrid halide perovskites as light absorbers. These have led to the successful enhancement …

Superfine nanodomain engineering unleashing ferroelectricity in incipient ferroelectrics

T Li, J Yang, S Deng, Z Wang, M Tang… - Journal of the …, 2024 - ACS Publications
Incipient ferroelectrics have emerged as an attractive class of functional materials owing to
their potential to be engineered for exotic ferroelectric behavior, holding great promise for …

Ferroelectric Hf 0.5 Zr 0.5 O 2 films with improved endurance obtained through low temperature epitaxial growth on seed layers

T Song, R Bachelet, G Saint-Girons, I Fina, F Sánchez - Nanoscale, 2023 - pubs.rsc.org
Crystallization temperature is a critical parameter in the stabilization of the metastable
ferroelectric phase of HfO2. The optimal crystallization temperature used for polycrystalline …

Sm-doping driven state-phase transition and energy storage capability in lead-free Ba (Zr0. 35Ti0. 65) O3 films

HT Vu, HN Vu, G Rijnders, MD Nguyen - Journal of Alloys and Compounds, 2023 - Elsevier
The stability of high energy-storage performance dielectric-film capacitors with respect to
frequency, temperature, and cycle number is very essential for developing energy-storage …

Control of up-to-down/down-to-up light-induced ferroelectric polarization reversal

H Tan, G Castro, J Lyu, P Loza-Alvarez, F Sánchez… - Materials …, 2022 - pubs.rsc.org
Light control of ferroelectric polarization is of interest for the exploitation of ferroelectric thin
films in ultrafast data storage and logic functionalities. The rapidly oscillating electric field of …

Reactive pulsed laser deposition of low particulate density and epitaxial TiN films on Si (100) for functional oxide integration

S Vura, RK Rai, P Nukala, S Raghavan - Thin Solid Films, 2022 - Elsevier
Abstract Epitaxial TiN films on (100) Si have been realized by reactive pulsed laser
deposition (PLD). Their utility is demonstrated by subsequent growth of epitaxial BaTiO 3 …

Ferroelectric domain architecture and poling of on Si

J Nordlander, F Eltes, M Reynaud, J Nürnberg… - Physical Review …, 2020 - APS
We investigate the ferroelectric domain architecture and its operando response to an
external electric field in BaTiO 3-based electro-optic heterostructures integrated on silicon …