Abstract Type-II superlattices (T2SLs) hold enormous potential for next-generation 8–14 μm
long-wavelength infrared (LWIR) detectors for use at high operating temperature (HOT). The …

Minority carrier lifetime, τ⁠, in type-2 strained-layer superlattices (SLSs) and in long-wave
Hg 0.78 Cd 0.22 Te (MCT) was measured by optical modulation response technique. It was …

A long minority carrier lifetime of 12.8 μs in a mid-wavelength infrared InAs/InAsSb type-II
superlattice is observed at 15 K using time-resolved photoluminescence technique. The …

We report the growth and characterization of type-II InAs/GaSb superlattice photodiodes
grown on a GaAs substrate. Through a low nucleation temperature and a reduced growth …

A limitation to the advancement of the strained-layer superlattice technology for infrared
detection is unwanted high dark currents and low R0A values, especially at long …

We report on long wavelength infrared photodetectors using InAs/GaSb superlattices (SLs)
with InSb-like and mixed interfaces (IFs). X-ray diffraction (XRD) measurements indicate that …

Dark current characteristics of 7 Monolayers (ML) InAs/4 ML GaSb SL pin photodiodes are
simulated using ATLAS software. Using appropriate models and material parameters, we …

We report on structural, electrical, and optical characterizations of midwave infrared
InAs/GaSb superlattice (SL) pin photodiodes. High-quality SL samples, with 1 μ m thick …

An InP-based pin photodiode with optical response out to 3.4 μm was designed and grown
by molecular beam epitaxy (MBE). One hundred pairs of 7-nm In_0.34Ga_0.66As/5-nm …

A midwave infrared pin photodiode based on a type II InAs/GaSb superlattice (SL) was
fabricated, and electrical measurements under dark conditions were performed as a function …