Although several advances have been made in the characterization and the mitigation of
light-induced degradation (LID), industrial silicon solar cells still suffer from different types of …

The theoretical concepts, experimental tools, and applications of surface photovoltage (SPV)
techniques are reviewed in detail. The theoretical discussion is divided into two sections …

This article combines an extensive literature review of new experimental data on properties
of Cu, Ni and Co and their precipitates in silicon with a discussion of experimental data …

This paper concerns diffusion related properties of Cu in Ge and Si. In Ge, Cu prefers to
occupy a substitutional lattice site whereas Cu in Si is mainly dissolved on an interstitial …

We report results of a detailed study of structural and electrical properties of copper silicide
precipitates in silicon. Using conventional and high‐resolution transmission electron …

The presence of copper contamination is known to cause strong light-induced degradation
(Cu-LID) in silicon. In this paper, we parametrize the recombination activity of light-activated …

Surface photovoltage minority carrier lifetime/diffusion length analysis of copper
contaminated silicon was performed. It was observed that copper and copper associated …

Transition-metal (TM) impurities from the 3 d series have been a source of concern in Si
technology for nearly 60 years. Surprisingly, numerous issues remain unresolved. In this first …

The interstitial copper ion (Cu i+) is a very fast-diffusing impurity in Si. While the isolated
interstitial is a shallow donor, it reacts with impurities and defects and these reactions affect …

accepted for publication 27 August 1997) n-type silicon samples were measured by deep
level transient spectroscopy (DLTS) immediately (within one hour of storage at room …