Ion irradiation and modification: The role of coupled electronic and nuclear energy dissipation and subsequent nonequilibrium processes in materials

Y Zhang, WJ Weber - Applied Physics Reviews, 2020 - pubs.aip.org
Understanding material responses to energy deposition from energetic charged particles is
important for defect engineering, ion-beam processing, ion-beam analysis and modification …

Oxygen defect processes in silicon and silicon germanium

A Chroneos, EN Sgourou, CA Londos… - Applied Physics …, 2015 - pubs.aip.org
Silicon and silicon germanium are the archetypical elemental and alloy semiconductor
materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of …

[HTML][HTML] Berberine protects against 6-OHDA-induced neurotoxicity in PC12 cells and zebrafish through hormetic mechanisms involving PI3K/AKT/Bcl-2 and Nrf2/HO-1 …

C Zhang, C Li, S Chen, Z Li, X Jia, K Wang, J Bao… - Redox biology, 2017 - Elsevier
Berberine (BBR) is a renowned natural compound that exhibits potent neuroprotective
activities. However, the cellular and molecular mechanisms are still unclear. Hormesis is an …

Vertical Ga2O3 MOSFET With Magnesium Diffused Current Blocking Layer

K Zeng, R Soman, Z Bian, S Jeong… - IEEE Electron Device …, 2022 - ieeexplore.ieee.org
Vertical MOSFET is a critical milestone in the gallium oxide (Ga 2 O 3) roadmap. However,
the lack of an effective current blocking layer in Ga 2 O 3, which is essential for any DMOS …

Near-infrared germanium PIN-photodiodes with> 1A/W responsivity

H Liu, TP Pasanen, TH Fung, J Isometsä… - Light: Science & …, 2025 - nature.com
Even though efficient near-infrared (NIR) detection is critical for numerous applications, state-
of-the-art NIR detectors either suffer from limited capability of detecting incoming photons, ie …

Seventy-five years since the point-contact transistor: Germanium revisited

EN Sgourou, A Daskalopulu, LH Tsoukalas… - Applied Sciences, 2022 - mdpi.com
The advent of the point-contact transistor is one of the most significant technological
achievements in human history with a profound impact on human civilization during the past …

[HTML][HTML] Reducing specific contact resistivity for n-type germanium using laser activation process and nano-island formation

S Baik, H Jeong, G Park, H Kang, JE Jang… - Applied Surface …, 2023 - Elsevier
This study presents a laser activation process (LAP) for germanium (Ge) to improve the
electrical performance of n-type Ge devices. The LAP highly activated the dopant and …

Enhanced accuracy through machine learning-based simultaneous evaluation: a case study of RBS analysis of multinary materials

G Magchiels, N Claessens, J Meersschaut… - Scientific Reports, 2024 - nature.com
We address the high accuracy and precision demands for analyzing large in situ or in
operando spectral data sets. A dual-input artificial neural network (ANN) algorithm enables …

GeSn lateral pin photodetector on insulating substrate

S Xu, YC Huang, KH Lee, W Wang, Y Dong, D Lei… - Optics express, 2018 - opg.optica.org
We report the first experimental demonstration of germanium-tin (GeSn) lateral pin
photodetector on a novel GeSn-on-insulator (GeSnOI) substrate. The GeSnOI is formed by …

Self-diffusion in crystalline silicon: A single diffusion activation enthalpy down to

T Südkamp, H Bracht - Physical Review B, 2016 - APS
Self-diffusion in silicon and the contribution of vacancies and self-interstitials have been
controversially discussed for 50 yr. Most recent results show that the intrinsic silicon self …