Design of a compact spin-orbit-torque-based ternary content addressable memory
This article presents the design of a novel and compact spin-orbit torque (SOT)-based
ternary content addressable memory (TCAM). Experimentally validated/calibrated …
ternary content addressable memory (TCAM). Experimentally validated/calibrated …
Computing-in-memory architecture using energy-efficient multilevel voltage-controlled spin-orbit torque device
S Shreya, A Jain, BK Kaushik - IEEE Transactions on Electron …, 2020 - ieeexplore.ieee.org
Conventional von Neumann architecture suffers from data trafficking and power hungriness
between memory and processing units. Recent architectures escalating to overcome these …
between memory and processing units. Recent architectures escalating to overcome these …
Modeling and design for magnetoelectric ternary content addressable memory (TCAM)
This article proposes a novel magnetoelectric (ME) effect-based ternary content addressable
memory (TCAM). The potential array-level write and search performances of the proposed …
memory (TCAM). The potential array-level write and search performances of the proposed …
SOT and STT-based 4-bit MRAM cell for high-density memory applications
This article presents a multilevel design for spin-orbit torque (SOT)-assisted spin-transfer
torque (STT)-based 4-bit magnetic random access memory (MRAM). Multilevel cell (MLC) …
torque (STT)-based 4-bit magnetic random access memory (MRAM). Multilevel cell (MLC) …
Energy-efficient all-spin BNN using voltage-controlled spin-orbit torque device for digit recognition
Artificial intelligence has been demonstrated for numerous applications including image
recognition and processing, internet-of-things (IoT), and speech recognition. Recent neural …
recognition and processing, internet-of-things (IoT), and speech recognition. Recent neural …
Enhanced Spin-to-Charge Conversion Efficiency in Ultrathin Bi2Se3 Observed by Spintronic Terahertz Spectroscopy
Owing to their remarkable spin–charge conversion (SCC) efficiency, topological insulators
(TIs) are the most attractive candidates for spin–orbit torque generators. The simple method …
(TIs) are the most attractive candidates for spin–orbit torque generators. The simple method …
Multidomain interactions in perpendicular magnetic tunnel junction (p-MTJ): Enabling multistate MRAM
N Pandey, YS Chauhan - IEEE Transactions on Electron …, 2023 - ieeexplore.ieee.org
We present a comprehensive study of multidomain (MD) effects in a perpendicular magnetic
tunnel junction (p-MTJ). The MD nucleation is considered in the free layer of MTJ, which …
tunnel junction (p-MTJ). The MD nucleation is considered in the free layer of MTJ, which …
A novel STT–SOT MTJ-based nonvolatile SRAM for power gating applications
S Tripathi, S Choudhary… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
This article proposes novel nonvolatile (NV) static random access memory (SRAM) circuits
based on spin transfer torque (STT) and spin orbit torque (SOT) operated magnetic tunnel …
based on spin transfer torque (STT) and spin orbit torque (SOT) operated magnetic tunnel …
[HTML][HTML] Voltage-controlled magnetic anisotropy-based spintronic devices for magnetic memory applications: Challenges and perspectives
Electronic spins provide an additional degree of freedom that can be used in modern spin-
based electronic devices. Some benefits of spintronic devices include nonvolatility, energy …
based electronic devices. Some benefits of spintronic devices include nonvolatility, energy …
Investigation of field-free switching of 2-D material-based spin–orbit torque magnetic tunnel junction
Spin Hall-assisted magnetization switching in a three-terminal magnetic tunnel junction
(MTJ) has attracted much attention due to its high-speed magnetization switching, which …
(MTJ) has attracted much attention due to its high-speed magnetization switching, which …