In the growing area of neuromorphic and in-memory computing, there are multiple reviews
available. Most of them cover a broad range of topics, which naturally comes at the cost of …

Wound management has long been a significant concern within the healthcare industry.
However, conventional passive wound dressings often fail to meet the requirements for …

Multiferroic materials offer a promising avenue for manipulating digital information by
leveraging the cross-coupling between ferroelectric and ferromagnetic orders. Despite the …

Ferroelectric hafnia-based thin films have attracted significant interest due to their
compatibility with complementary metal-oxide-semiconductor technology (CMOS) …

Advancements in the semiconductor industry introduce novel channel materials, device
structures, and integration methods, leading to intricate physics challenges when …

The well‐developed high‐k technologies ease the integration complexity for HfO2‐based
ferroelectric (FE) devices in the complementary metal‐oxide semiconductor processes …

The development of ultrathin, stable ferroelectric materials is crucial for advancing high‐
density, low‐power electronic devices. Nonetheless, ultrathin ferroelectric materials are rare …

Two-dimensional (2D) heterostructures with ferromagnetism and ferroelectricity provide a
promising avenue to miniaturize the device size, increase computational power, and reduce …

Investigations on fluorite-structured ferroelectric HfO2/ZrO2 thin films are aiming to achieve
high-performance films required for memory and computing technologies. These films …

Abstract 2D semiconductors have emerged as candidates for next‐generation electronics.
However, previously reported 2D transistors which typically employ the gate‐first process to …