In the last couple of decades, high-performance electronic and optoelectronic devices based
on semiconductor heterostructures have been required to obtain increasingly strict and well …

Publisher Summary This chapter summarizes the comprehensive understanding of linear
excitonic spectra from quantum nanostructures with disorder. The description of the relevant …

Photoluminescence spectra of three weakly coupled GaAs quantum wells are measured as
a function of the excitation energy with a high resolution of both the excitation and the …

We have studied the temperature dependence of the photoluminescence of a single layer of
InAs/InP (001) self-assembled quantum wires emitting at 1.5 μm. The non-radiative …

Photoluminescence spectra of a G a A s/A l 0.17 Ga 0.83 As single quantum well with growth
islands are investigated in the Stokes as well as in the anti-Stokes regime. While at 5 K only …

Temperature dependent photoluminescence and cathodoluminescence of selfassembled
CdSe/ZnSe quantum dots grown by metalorganic vapor phase deposition were investigated …

Photoluminescence spectroscopy is used to investigate interface roughness effects on
electron and hole tunneling through G a A s/I n 0.1 Ga 0.9 A s/A l A s double-barrier …

Spectroscopic study of the InAs quantum dot (QD) formation in GaAs ringlike nanostructures
is carried out. Ga droplet epitaxy is used to form GaAs ringlike nanostructures. Subsequently …

By means of in situ arsenic/phosphorus partial pressure control, the metastabilization of
transitional surface structures during the coherent reformation and flattening of InGaAs (P) …

Equispaced energy levels Quantum well (QW) is realized in the conduction band of
semiconductor nanostructures. The procedure starts with the effective-mass Schrodinger …