Spin-charge interconversion in heterostructures based on group-IV semiconductors

F Bottegoni, C Zucchetti, G Isella, M Bollani… - La Rivista del Nuovo …, 2020 - Springer
Spin-charge interconversion phenomena are ubiquitous in solid-state physics and represent
a powerful tool to investigate spin transport in metals, semiconductors and …

Modeling the photo-induced inverse spin-Hall effect in Pt/semiconductor junctions

F Bottegoni, C Zucchetti, G Isella, E Pinotti… - Journal of Applied …, 2018 - pubs.aip.org
We show that the photon energy dependence of the photo-induced inverse spin-Hall effect
(ISHE) signal at Pt/semiconductor junctions can be reproduced by a model that explicitly …

Spin-charge interconversion in Ge-based structures

C Zucchetti - 2019 - politesi.polimi.it
Abstract in italiano Nel presente lavoro vengono studiate la generazione, il trasporto e la
detezione di elettroni spin-polarizzati in strutture basate su germanio. Nel testo si trovano sia …

Etude de l'injection et détection de spin dans le silicium et germanium: d'une mesure locale de l'accumulation à la détection non locale du courant de spin

F Rortais - 2016 - theses.hal.science
Depuis la découverte de la magnétorésistance (MR) géante en 1988 par le groupe d'Albert
Fert (prix Nobel de physique en 2007), le domaine de l'électronique de spin a connu un …