[HTML][HTML] Epitaxial films and devices of transparent conducting oxides: La: BaSnO3
P Ngabonziza, AP Nono Tchiomo - APL Materials, 2024 - pubs.aip.org
This paper reviews recent developments in materials science and device physics of high-
quality epitaxial films of the transparent perovskite La-doped barium stannate, La: BaSnO 3 …
quality epitaxial films of the transparent perovskite La-doped barium stannate, La: BaSnO 3 …
Confinement of Electrons at the LaInO3/BaSnO3 Heterointerface
D Pfützenreuter, S Kim, H Cho… - Advanced Materials …, 2022 - Wiley Online Library
The properties of the conductance at the LaInO3/BaSnO3 heterointerface are reported. The
heterointerface is formed by covering the semi‐insulating BaSnO3: La thin films with 10 nm …
heterointerface is formed by covering the semi‐insulating BaSnO3: La thin films with 10 nm …
[HTML][HTML] Low-frequency noise behaviors of quasi-two-dimensional electron systems based on complex oxide heterostructures
We report the low-frequency noise behaviors in quasi-two-dimensional (quasi-2D) electron
systems based on complex oxide heterostructures. First, the surface 2D electron gas (2DEG) …
systems based on complex oxide heterostructures. First, the surface 2D electron gas (2DEG) …
Fully Deep‐UV Transparent Thin Film Transistors Based on SrSnO3
Ultra‐wide bandgap semiconductors are gaining attention for their promising properties for
UV optoelectronics and UV transparent electronics as well as high‐power applications …
UV optoelectronics and UV transparent electronics as well as high‐power applications …
Enabling 2D Electron Gas with High Room‐Temperature Electron Mobility Exceeding 100 cm2 Vs−1 at a Perovskite Oxide Interface
In perovskite oxide heterostructures, bulk functional properties coexist with emergent
physical phenomena at epitaxial interfaces. Notably, charge transfer at the interface …
physical phenomena at epitaxial interfaces. Notably, charge transfer at the interface …
[HTML][HTML] Tuning of optoelectronic performance of SrTiO3 by surface termination and thickness
The outstanding optical and electrical properties make ternary oxides highly suitable for
advanced optoelectronic applications comparing to the traditional silicon-based materials …
advanced optoelectronic applications comparing to the traditional silicon-based materials …
Low resistance epitaxial edge contacts to buried nanometer thick conductive layers of BaSnO3
As the size of the semiconductor device decreases, the importance of the low resistance
contacts to devices cannot be overstated. Here, we studied the contact resistance to buried …
contacts to devices cannot be overstated. Here, we studied the contact resistance to buried …
Employing high-temperature-grown SrZrO3 buffer to enhance the electron mobility in La: BaSnO3-based heterostructures
We report a synthetic route to achieve high electron mobility at room temperature in epitaxial
La: BaSnO 3/SrZrO 3 heterostructures prepared on several oxide substrates. Room …
La: BaSnO 3/SrZrO 3 heterostructures prepared on several oxide substrates. Room …
[PDF][PDF] A computational study of the geometric and electronic properties of oxide perovskites, and an investigation into the role of vacancies for surface stability.
M Morgan - 2024 - ore.exeter.ac.uk
A first principles study of surface energetics of the (001) surface terminations of nine oxide
perovskites is presented. Additionally, investigation into the behaviour of vacancies as a …
perovskites is presented. Additionally, investigation into the behaviour of vacancies as a …
[图书][B] Polarization-Discontinuity-Doped Two-Dimensional Electron Gas in BaSnO3/LainO3Heterostructures Grown By Plasma-assisted Molecular Beam Epitaxy
G Hoffmann - 2023 - search.proquest.com
The present work investigates the growth of BaSnO 3/LaInO 3 (BSO/LIO) heterostructures
using plasma-assisted molecular beam epitaxy (PA-MBE). Prior to the realization of the …
using plasma-assisted molecular beam epitaxy (PA-MBE). Prior to the realization of the …