The carbon and hydrogen contents in ALD-grown ZnO films define a narrow ALD temperature window
B Xia, JJ Ganem, E Briand, S Steydli, H Tancrez… - Vacuum, 2021 - Elsevier
Zinc oxide thin films grown by atomic layer deposition have been subject to great attention
over the past few years. In this work, we study ZnO films grown on Si substrates by atomic …
over the past few years. In this work, we study ZnO films grown on Si substrates by atomic …
Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
R Dallaev - Vacuum, 2021 - Elsevier
Hydrogen impregnation is one of the main sources of contamination in AlN thin films
obtained by atomic layer deposition method (ALD) as many studies report. Such impurities …
obtained by atomic layer deposition method (ALD) as many studies report. Such impurities …
Hydrogen incorporation in Al2O3 and ZnO thin films grown by atomic layer deposition
S Kinnunen - JYU dissertations, 2022 - jyx.jyu.fi
Atomikerroskasvatus (ALD) on ohutkalvojen valmistamiseen käytetty menetelmä, jolla
voidaan tuottaa äärimmäisen ohuita ja tasaisia kalvoja syvienkin kolmiulotteisten …
voidaan tuottaa äärimmäisen ohuita ja tasaisia kalvoja syvienkin kolmiulotteisten …