The status of research on both wurtzite and zinc‐blende GaN, AlN, and InN and their alloys
is reviewed including exciting recent results. Attention is paid to the crystal growth …

In the past several years, research in each of the wide‐band‐gap semiconductors, SiC,
GaN, and ZnSe, has led to major advances which now make them viable for device …

Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on the
different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures …

In this review, the structural, mechanical, thermal, and chemical properties of substrates
used for gallium nitride (GaN) epitaxy are compiled, and the properties of GaN films …

The present invention relates to a method for producing a modified surface of a substrate
that stimulates the growth of epitaxial layers of group-III nitride semiconductors with …

Semiconductor Materials presents physico-chemical, electronic, electrical, elastic,
mechanical, magnetic, optical, and other properties of a vast group of elemental, binary, and …

1. Introduction Recently, blue-or ultraviolet-light-emitting lasers have been developed using
GaN and InGaN-based compound semiconductors.*** These device structures have been …

Electron mobilities in GaN and InN are calculated, by variational principle, as a function of
temperature for carrier concentrations of 10r6, 10r7, and 1, 01* crnd3 with compensation …

Recent development of technology and understanding of the growth mechanism in
heteroepitaxial growth of nitrides on highly-mismatched substrates have enabled us to grow …

The" blue laser" is an exciting new device used in physics. The potential is now being
recognized for its development into a commercial lighting system using about a tenth of the …