We review the history, development, design principles, experimental operating
characteristics, and specialized architectures of interband cascade lasers for the mid-wave …

We report interband cascade light-emitting devices (ICLEDs) emitting at peak wavelengths
of 3.1 to 3.2 μ m that display higher maximum output powers, radiances, and efficiencies …

Measurements of carrier recombination rates using a time-resolved pump-probe technique
are reported for mid-wave infrared InAs/InAs 1− x Sb x type-2 superlattices (T2SLs). By …

Anisotropic wet etching of silicon (Si) has been known for decades, but the extraordinary
capabilities of this technology to provide highly ordered microphotonic arrays have received …

Efficient mid-infrared light output has been obtained by incorporating a W-superlattice into a
cascaded mid-infrared LED structure and by thinning and roughening of the emission side of …

We demonstrate incoherent light emission peaked at λ= 3.3 μm from a 15-stage interband
cascade active region. The interband cascade light emitting devices with mesa diameters …

n-type anode layer, high-power MWIR superlattice LED | Applied Physics Letters | AIP Publishing
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Interband cascade light-emitting diodes (ICLEDs) offer attractive advantages for infrared
applications, which would greatly expand if high-quality growth on silicon substrates could …

The demand for high-speed and/or high-temperature infrared (IR) scene projectors has led
to the development of systems based on IR light-emitting-diode (LED) arrays. Using mid …

InAs/GaSb mid-wave, cascaded superlattice light emitting diodes are found to give higher
radiance when epitaxially grown on mismatched GaAs substrates compared to lattice …