The optimization and analysis of a triple-fin heterostructure-on-insulator fin field-effect transistor with a stacked high-K configuration and 10 nm channel length
P Saha, R Sankar Dhar, S Nanda, K Kumar… - Nanomaterials, 2023 - mdpi.com
The recent developments in the replacement of bulk MOSFETs with high-performance
semiconductor devices create new opportunities in attaining the best device configuration …
semiconductor devices create new opportunities in attaining the best device configuration …
A novel approach to investigate analog and digital circuit applications of silicon Junctionless-Double-Gate (JL-DG) MOSFETs
The double gate junctionless transistor (DG-JLT) has become the most promising device in
sub nano-meter regime. DGJLT based circuits have improved performance and simpler …
sub nano-meter regime. DGJLT based circuits have improved performance and simpler …
Analytical modeling for electrical characteristics of source pocket-based hetero dielectric double-gate TFETs
In this article, a physics-based 2-D analytical model for electrical characteristics such as
electric field, surface potential, and drain current of source pocket hetero-dielectric double …
electric field, surface potential, and drain current of source pocket hetero-dielectric double …
Exploration of underlap induced high-k spacer with gate stack on strain channel cylindrical nanowire FET for enriched performance
This research explores a comprehensive examination of gate underlap incorporated
strained channel Cylindrical Gate All Around Nanowire FET having enriched performances …
strained channel Cylindrical Gate All Around Nanowire FET having enriched performances …
Investigation of novel low bandgap source material for hetero-dielectric GAA-TFET with enhanced performance
The customary MOSFETs can be supplanted by Tunnel Field Effect Transistors (TFETs),
because of its capability of accomplishing sub-threshold swing (SS) under 60 mV/decade …
because of its capability of accomplishing sub-threshold swing (SS) under 60 mV/decade …
Optimization of negative capacitance junctionless gate-all-around field-effect transistor using asymmetric non-local lateral Gaussian doping
Y Han, W Lü, W Wei, C Zhang, D Chen - Microelectronics Journal, 2023 - Elsevier
Technology advancements directed towards Internet-of-Things (IoT) and wearable
computing electronics applications are booming in low-power devices, which requires …
computing electronics applications are booming in low-power devices, which requires …
[HTML][HTML] Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel
The continuous scaling down of MOSFETs is one of the present trends in semiconductor
devices to increase device performance. Nevertheless, with scaling down beyond 22 nm …
devices to increase device performance. Nevertheless, with scaling down beyond 22 nm …
Impact of temperature variation on linearity parameters of nanotube surrounding gate (NT‐SG) MOSFETs
N Garg, A Pandey, AK Pandey, A Tyagi… - … Journal of Numerical …, 2024 - Wiley Online Library
The work investigates the effect of temperature variation on the linearity performance of
Nanotube Junctionless Surrounding Gate (NT‐SG) MOSFET. In this study, the linearity …
Nanotube Junctionless Surrounding Gate (NT‐SG) MOSFET. In this study, the linearity …
Comparative Studies on the Source Pocket Hetero Dielectric Double Gate TFET (SP-HD-DG-TFET): Varying Width of the Source Pocket
SK Pandit, BP Pandey, S Shrestha, KK Kavi… - Physics of the Solid …, 2024 - Springer
Tunnel field effect transistor (TFET) is replacing other similar devices, because of it's
extremely lower value of sub-threshold swing (SS) and leakage current. Due to the …
extremely lower value of sub-threshold swing (SS) and leakage current. Due to the …
Exploration and analysis of n-FinFET implementing stacked high-K at 08 nm gate length
FinFETs ensured the continuation of semiconductor industry with reliable, high performance
and low power devices fabricated at sub-100 nm technology nodes. These FinFETs are able …
and low power devices fabricated at sub-100 nm technology nodes. These FinFETs are able …