The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …

The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage …

Ultrahigh-resolution displays for augmented reality (AR) and virtual reality (VR) applications
require a novel architecture and process. Atomic-layer deposition (ALD) enables the facile …

The scaling of complementary metal oxide semiconductor transistors has led to the silicon
dioxide layer, used as a gate dielectric, being so thin (1.4 nm) that its leakage current is too …

The discovery of ferroelectricity in polycrystalline thin films of doped HfO2 has reignited the
expectations of developing competitive ferroelectric non-volatile memory devices. To date, it …

High-k gate dielectrics, particularly Hf-based materials, are likely to be implemented in
CMOS advanced technologies. One of the important challenges in integrating these …

This letter presents calculations of the energy levels of the oxygen vacancy and oxygen
interstitial defects in HfO 2 using density functional methods that do not need an empirical …

In the present article, we give a review of modern data and latest achievements pertaining to
the study of electronic properties of oxygen vacancies in hafnium oxide. Hafnium oxide is a …

The properties of oxides with high-dielectric constant are being extensively studied for use
as gate oxides. The criteria for choosing such oxides is discussed. The bonding at Si–oxide …

We have calculated the electronic structure and spectroscopic properties of the oxygen
vacancy in different charge states in the monoclinic phase of Hf O 2. Periodic and embedded …