A junctionless gate-all-around silicon nanowire FET of high linearity and its potential applications
The linearity of a gate-all-around junctionless silicon nanowire (SiNW) FET has been
analyzed. The SiNW FET shows a perfectly linear I_D–V_G relation and a nearly zero output …
analyzed. The SiNW FET shows a perfectly linear I_D–V_G relation and a nearly zero output …
Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET
MLP Tan, G Lentaris, GAJ Amaratunga - Nanoscale research letters, 2012 - Springer
The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for
parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET) …
parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET) …
[图书][B] Nanoelectronics: Quantum engineering of low-dimensional nanoensembles
VK Arora - 2018 - taylorfrancis.com
Brings the Band Structure of Carbon-Based Devices into the Limelight A shift to carbon is
positioning biology as a process of synthesis in mainstream engineering. Silicon is quickly …
positioning biology as a process of synthesis in mainstream engineering. Silicon is quickly …
Improved crosstalk noise modeling of MWCNT interconnects using FDTD technique
This paper presents a crosstalk noise model of CMOS gate-driven coupled multi-walled
carbon nanotube (MWCNT) interconnects based on finite-difference time-domain (FDTD) …
carbon nanotube (MWCNT) interconnects based on finite-difference time-domain (FDTD) …
High-field transport in a graphene nanolayer
High-field electron transport properties in a two-dimensional nanolayer are studied by an
application of the anisotropic nonequilibrium distribution function, a natural extension of the …
application of the anisotropic nonequilibrium distribution function, a natural extension of the …
Analytical modeling of high performance single-walled carbon nanotube field-effect-transistor
We present a novel analytical modeling of a zigzag single-walled semiconducting carbon
nanotube field effect transistor (CNFET) by incorporating quasi-one-dimensional (Q1D) top …
nanotube field effect transistor (CNFET) by incorporating quasi-one-dimensional (Q1D) top …
The channel mobility degradation in a nanoscale metal–oxide–semiconductor field effect transistor due to injection from the ballistic contacts
MA Riyadi, VK Arora - Journal of Applied Physics, 2011 - pubs.aip.org
The ballistic mobility degradation is shown to originate from nonstationary (transient)
transport in response to the ohmic electric field. The source and drain reservoirs launch …
transport in response to the ohmic electric field. The source and drain reservoirs launch …
Transition of equilibrium stochastic to unidirectional velocity vectors in a nanowire subjected to a towering electric field
VK Arora, DCY Chek, MLP Tan… - Journal of applied …, 2010 - pubs.aip.org
The equilibrium Fermi–Dirac distribution is revealed to transform to an asymmetric
distribution in a very high electric field where the energy gained (or lost) in a mean free path …
distribution in a very high electric field where the energy gained (or lost) in a mean free path …
[HTML][HTML] Valley-dependent quasi-ballistic electron transport in FETs based on multi-valley semiconductors
M Yelisieiev, VA Kochelap - AIP Advances, 2024 - pubs.aip.org
We study quasi-ballistic transport in field effect transistors (FETs) with the conductive
channels containing several groups of the carriers. These groups are considered …
channels containing several groups of the carriers. These groups are considered …
The drift response to a high-electric-field in carbon nanotubes
The carrier statistics in carbon nanotubes (CNTs) with nonparabolic energy spectrum is
studied in order to predict the ultimate (intrinsic) drift velocity as a function of temperature …
studied in order to predict the ultimate (intrinsic) drift velocity as a function of temperature …