Prediction of electrical properties of GAAFET based on integrated learning model
X Zhang, S Chen, S Wang, J Li, D Chen, Y Li… - …, 2024 - iopscience.iop.org
As device feature sizes continue to decrease and fin field effect transistors reach their
physical limits, gate all around field effect transistors (GAAFETs) have emerged with larger …
physical limits, gate all around field effect transistors (GAAFETs) have emerged with larger …
Device-simulation-based machine learning technique for the characteristic of line tunnel field-effect transistors
With the rapid growth of the semiconductor manufacturing industry, it has been evident that
device simulation has been considered a sluggish process. Therefore, due to downscaling …
device simulation has been considered a sluggish process. Therefore, due to downscaling …
A Hybrid 1D-CNN-LSTM Technique for WKF-Induced Variability of Multi-Channel GAA NS-and NF-FETs
Presently deep learning (DL) techniques are massively used in the semiconductor industry.
At the same time, applying a deep learning approach for small datasets is also an immense …
At the same time, applying a deep learning approach for small datasets is also an immense …