Polarity in ZnO nanowires: A critical issue for piezotronic and piezoelectric devices
V Consonni, AM Lord - Nano Energy, 2021 - Elsevier
The polar and piezoelectric nature of the wurtzite structure of ZnO nanowires with a high
aspect ratio at nanoscale dimensions is of high interest for piezotronic and piezoelectric …
aspect ratio at nanoscale dimensions is of high interest for piezotronic and piezoelectric …
ZnO Schottky barriers and Ohmic contacts
LJ Brillson, Y Lu - Journal of Applied Physics, 2011 - pubs.aip.org
ZnO has emerged as a promising candidate for optoelectronic and microelectronic
applications, whose development requires greater understanding and control of their …
applications, whose development requires greater understanding and control of their …
Group‐III sesquioxides: growth, physical properties and devices
H Von Wenckstern - Advanced Electronic Materials, 2017 - Wiley Online Library
The group‐III sesquioxides possess material properties that render them interesting for
applications such as high‐power rectifiers and transistors, solar‐blind UV detectors and inter …
applications such as high‐power rectifiers and transistors, solar‐blind UV detectors and inter …
Investigation of Electrophoretic Deposition of PANI Nano fibers as a Manufacturing Technology for corrosion protection
M Fuseini, MMY Zaghloul - Progress in Organic Coatings, 2022 - Elsevier
In this study, the process of electrophoretic deposition (EPD) of polyaniline (PANI) film was
described kinetically via utilizing three models; Hamaker, Zhang, and Baldisseri for both …
described kinetically via utilizing three models; Hamaker, Zhang, and Baldisseri for both …
Polarity in GaN and ZnO: Theory, measurement, growth, and devices
The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
Influence of oxygen vacancies on Schottky contacts to ZnO
Ni, Ir, Pd, Pt, and silver oxide Schottky contacts were fabricated on the Zn-polar face of
hydrothermally grown, bulk ZnO. A relationship was found between the barrier height of the …
hydrothermally grown, bulk ZnO. A relationship was found between the barrier height of the …
[HTML][HTML] Challenges and opportunities of ZnO-related single crystalline heterostructures
Y Kozuka, A Tsukazaki, M Kawasaki - Applied Physics Reviews, 2014 - pubs.aip.org
Recent technological advancement in ZnO heterostructures has expanded the possibility of
device functionalities to various kinds of applications. In order to extract novel device …
device functionalities to various kinds of applications. In order to extract novel device …
Recent progress on ZnO‐based metal‐semiconductor field‐effect transistors and their application in transparent integrated circuits
H Frenzel, A Lajn, H Von Wenckstern… - Advanced …, 2010 - Wiley Online Library
Metal‐semiconductor field‐effect transistors (MESFETs) are widely known from opaque high‐
speed GaAs or high‐power SiC and GaN technology. For the emerging field of transparent …
speed GaAs or high‐power SiC and GaN technology. For the emerging field of transparent …
Transparent semiconducting oxides: Materials and devices
M Grundmann, H Frenzel, A Lajn… - … status solidi (a), 2010 - Wiley Online Library
Transparent conductive oxides (TCOs) are a well‐known material class allowing Ohmic
conduction. A large free carrier concentration in the 1021 cm− 3 range and high conductivity …
conduction. A large free carrier concentration in the 1021 cm− 3 range and high conductivity …
Mist-CVD Grown Sn-Doped -Ga2O3 MESFETs
GT Dang, T Kawaharamura, M Furuta… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
This paper demonstrates the use of cost-effective solution-processed α-Ga 2 O 3 thin films
(TFs) for electronic device applications. MESFETs based on AgO x Schottky diode (SD) …
(TFs) for electronic device applications. MESFETs based on AgO x Schottky diode (SD) …