Polarity in ZnO nanowires: A critical issue for piezotronic and piezoelectric devices

V Consonni, AM Lord - Nano Energy, 2021 - Elsevier
The polar and piezoelectric nature of the wurtzite structure of ZnO nanowires with a high
aspect ratio at nanoscale dimensions is of high interest for piezotronic and piezoelectric …

ZnO Schottky barriers and Ohmic contacts

LJ Brillson, Y Lu - Journal of Applied Physics, 2011 - pubs.aip.org
ZnO has emerged as a promising candidate for optoelectronic and microelectronic
applications, whose development requires greater understanding and control of their …

Group‐III sesquioxides: growth, physical properties and devices

H Von Wenckstern - Advanced Electronic Materials, 2017 - Wiley Online Library
The group‐III sesquioxides possess material properties that render them interesting for
applications such as high‐power rectifiers and transistors, solar‐blind UV detectors and inter …

Investigation of Electrophoretic Deposition of PANI Nano fibers as a Manufacturing Technology for corrosion protection

M Fuseini, MMY Zaghloul - Progress in Organic Coatings, 2022 - Elsevier
In this study, the process of electrophoretic deposition (EPD) of polyaniline (PANI) film was
described kinetically via utilizing three models; Hamaker, Zhang, and Baldisseri for both …

Polarity in GaN and ZnO: Theory, measurement, growth, and devices

J Zuniga-Perez, V Consonni, L Lymperakis… - Applied Physics …, 2016 - pubs.aip.org
The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …

Influence of oxygen vacancies on Schottky contacts to ZnO

MW Allen, SM Durbin - Applied Physics Letters, 2008 - pubs.aip.org
Ni, Ir, Pd, Pt, and silver oxide Schottky contacts were fabricated on the Zn-polar face of
hydrothermally grown, bulk ZnO. A relationship was found between the barrier height of the …

[HTML][HTML] Challenges and opportunities of ZnO-related single crystalline heterostructures

Y Kozuka, A Tsukazaki, M Kawasaki - Applied Physics Reviews, 2014 - pubs.aip.org
Recent technological advancement in ZnO heterostructures has expanded the possibility of
device functionalities to various kinds of applications. In order to extract novel device …

Recent progress on ZnO‐based metal‐semiconductor field‐effect transistors and their application in transparent integrated circuits

H Frenzel, A Lajn, H Von Wenckstern… - Advanced …, 2010 - Wiley Online Library
Metal‐semiconductor field‐effect transistors (MESFETs) are widely known from opaque high‐
speed GaAs or high‐power SiC and GaN technology. For the emerging field of transparent …

Transparent semiconducting oxides: Materials and devices

M Grundmann, H Frenzel, A Lajn… - … status solidi (a), 2010 - Wiley Online Library
Transparent conductive oxides (TCOs) are a well‐known material class allowing Ohmic
conduction. A large free carrier concentration in the 1021 cm− 3 range and high conductivity …

Mist-CVD Grown Sn-Doped -Ga2O3 MESFETs

GT Dang, T Kawaharamura, M Furuta… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
This paper demonstrates the use of cost-effective solution-processed α-Ga 2 O 3 thin films
(TFs) for electronic device applications. MESFETs based on AgO x Schottky diode (SD) …