T Chen, Q Sun, B Yu - 2021 IEEE 14th International …, 2021 - ieeexplore.ieee.org
With continued scaling, the susceptibility of nanometer CMOS to reliability issues has increased significantly in analog/mixed-signal (AMS) circuits. The industrial large-scale AMS …
J Ou, B Yu, DZ Pan - Proceedings of the 2016 on International …, 2016 - dl.acm.org
Directed Self-Assembly (DSA) is a very promising emerging lithography for 7nm and beyond, where a coarse guiding template produced by conventional optical lithography can" …
Studies on further IC development mutually predict that the reliability of future integrated circuits (ICs) will be severely endangered by the occurrence of electromigration (EM). The …
S Bigalke, J Lienig - Proceedings of the 2016 on International …, 2016 - dl.acm.org
The ongoing shrinking of interconnects in integrated circuits (ICs) induces reliability issues caused by electromigration (EM), including void-induced failure mechanisms in IC vias. We …
Asynchronous On-Chip Networks and Fault-Tolerant Techniques is the first comprehensive study of fault-tolerance and fault-caused deadlock effects in asynchronous on-chip networks …
S Wang, MB Tahoori - IEEE Transactions on Very Large Scale …, 2017 - ieeexplore.ieee.org
With increasing temperature and current density, electromigration (EM) becomes a major interconnect reliability concern for 3-D integrated-circuits (3-D ICs). In 3-D power delivery …
With the continuous scaling of integrated circuit (IC) technologies, electromigration (EM) prevails as one of the major reliability challenges facing the design of robust circuits. With …
X Jia, Y Cai, Q Zhou, B Yu - Proceedings of the 26th edition on Great …, 2016 - dl.acm.org
In modern VLSI design, manufacturing yield and chip performance are seriously affected by via failure. Redundant via insertion is an effective technique recommended by foundries to …
W Chung, S Shim, Y Shin - 2016 Design, Automation & Test in …, 2016 - ieeexplore.ieee.org
In directed self-assembly lithography (DSAL), vias that are located close are clustered and patterned together. A large and complex cluster, however, is not allowed in this process due …