Since the discovery of graphene, two-dimensional (2D) materials have gained widespread
attention, owing to their appealing properties for various technological applications. Etched …

Resistive-switching-based memory devices meet most of the requirements for use in next-
generation information and communication technology applications, including standalone …

Memristive devices are among the most emerging electronic elements to realize artificial
synapses for neuromorphic computing (NC) applications and have potential to replace the …

MXene, a new state-of-the-art two-dimensional (2D) nanomaterial, has attracted
considerable interest from both industry and academia because of its excellent electrical …

High-density memory devices are essential to sustain growth in information technology (IT).
Furthermore, brain-inspired computing devices are the future of IT businesses such as …

The recent progress of selector and self‐rectifying devices for resistive random‐access
memory applications is reviewed. In particular, the performance of crossbar arrays based on …

The rise of artificial intelligence and machine learning demands versatile electronic devices
for memory and brain-inspired computing applications. The electronic materials are the …

In the present work, we have demonstrated the capacitive coupled non-zero and type-II
hysteresis behavior of nickel ferrite (NFO)-titanium oxide (TiO 2) nanocomposite. For this …

In this study, dielectric and bipolar resistive switching properties of the chalcogenide from
the Ag–As 40 S 30 Se 30 system were investigated for potential application in non-volatile …

In this study, we used the one-pot solvothermal method to synthesize the TiO 2 nanospheres
(NSs) and used them for non-volatile memory and neuromorphic computing applications …