Chalcogenide thin films have been investigated and explored in the last several decades to
widen their use in optical, electronic, and optoelectronic device sectors. The phenomenon …

A review of the ionizing radiation effects on resistive random access memory (ReRAM)
technology and devices is presented in this article. The review focuses on vertical devices …

The Hg/NiO/Pt capacitor with a Hg top electrode diameter of about 35 m showed the typical
bistable resistive switching characteristic. After the removal of the Hg top electrode, we …

The Au∕ Cr∕ Zr+-implanted-Zr O 2∕ n+-Si sandwiched structure exhibits reversible
bipolar resistive switching behavior under dc sweeping voltage. The resistance ratio (R …

Solid electrolytes are a class of materials in which the cationic or anionic constituents are not
confined to specific lattice sites, but are essentially free to move throughout the structure …

We investigate the nature of thin films formed by the photodissolution of Ag into Se-rich Ge–
Se glasses for use in programmable metallization cell devices. These devices rely on ion …

Ion-conducting memristors comprised of the layered chalcogenide materials Ge 2 Se
3/SnSe/Ag are described. The memristor, termed a self-directed channel (SDC) device, can …

The two main constituent water masses of the deep North Atlantic Ocean—North Atlantic
Deep Water at the bottom and Labrador Sea Water at an intermediate level—are currently …

Methods of forming metal-doped chalcogenide layers and devices containing such doped
chalcogenide layers include using a plasma to induce diffusion of metal into a chalco genide …

An inverted PCRAM cell is formed by plating the bottom electrode, made of copper for
example, with a conductive material. Such as silver. Chalcogenide material is disposed over …