The interband cascade laser

JR Meyer, WW Bewley, CL Canedy, CS Kim, M Kim… - Photonics, 2020 - mdpi.com
We review the history, development, design principles, experimental operating
characteristics, and specialized architectures of interband cascade lasers for the mid-wave …

Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

E Tournié, L Monge Bartolome, M Rio Calvo… - Light: Science & …, 2022 - nature.com
There is currently much activity toward the integration of mid-infrared semiconductor lasers
on Si substrates for developing a variety of smart, compact, sensors based on Si-photonics …

Recent advances in light sources on silicon

Y Han, H Park, J Bowers, KM Lau - Advances in Optics and Photonics, 2022 - opg.optica.org
Realizing efficient on-chip light sources has long been the “holy-grail” for Si-photonics
research. Several important breakthroughs were made in this field in the past few years. In …

Interband cascade technology for energy-efficient mid-infrared free-space communication

P Didier, H Knötig, O Spitz, L Cerutti… - Photonics …, 2023 - opg.optica.org
Space-to-ground high-speed transmission is of utmost importance for the development of a
worldwide broadband network. Mid-infrared wavelengths offer numerous advantages for …

Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides

A Remis, L Monge-Bartolome, M Paparella… - Light: Science & …, 2023 - nature.com
Silicon (Si) photonics has recently emerged as a key enabling technology in many
application fields thanks to the mature Si process technology, the large silicon wafer size …

[HTML][HTML] Mid-infrared microring resonators and optical waveguides on an InP platform

K Zhang, G Böhm, MA Belkin - Applied Physics Letters, 2022 - pubs.aip.org
We demonstrate mid-infrared ring resonators fabricated in an In 0.53 Ga 0.47 As/InP
materials platform operating at a wavelength of approximately 5.2 μm with quality factors …

Mid-infrared InAs/InAsSb superlattice nBn photodetector monolithically integrated onto silicon

E Delli, V Letka, PD Hodgson, E Repiso… - Acs …, 2019 - ACS Publications
Mid-infrared (MIR) silicon photonics holds the potential for realizing next generation
ultracompact spectroscopic systems for applications in gas sensing, defense, and medical …

Mid-infrared laser diodes epitaxially grown on on-axis (001) silicon

M Rio Calvo, L Monge Bartolomé, M Bahriz, G Boissier… - Optica, 2020 - opg.optica.org
The direct epitaxial growth of III-V semiconductor lasers on standard, CMOS-compatible, on-
axis (001) Si substrates is actively sought for the realization of active photonic integrated …

ZrS3/MS2 and ZrS3/MXY (MMo, W; X, YS, Se, Te; X≠ Y) type-II van der Waals hetero-bilayers: prospective candidates in 2D excitonic solar cells

R Ahammed, A Rawat, N Jena, MK Mohanta… - Applied Surface …, 2020 - Elsevier
Excellent photovoltaic abilities in a 2D excitonic solar cell based on staggered type-II van
der Waals (vdW) hetero-bilayers comprising of semiconducting ZrS 3 monolayer and …

Monolithic integration of mid-infrared quantum cascade lasers and frequency combs with passive waveguides

R Wang, P Täschler, Z Wang, E Gini, M Beck… - ACS …, 2022 - ACS Publications
Mid-infrared semiconductor lasers in photonic integrated circuits are of considerable interest
for a variety of industrial, environmental, and medical applications. However, photonic …