CdSe thin film transistor (TFT) structures which have been ion implanted with 50 keV 52Cr,
50 keV 27Al, or 15 keV 11B have a very steeply rising conductivity above some threshold …

This is a single-source treatment of developments in TFT production from international
specialists. It interweaves overlapping areas in multiple disciplines pertinent to transistor …

We have measured the time and temperature dependence of the two prominent instability
mechanisms in amorphous silicon thin‐film transistors, namely, the creation of metastable …

We have successfully made thin film transistors on transparent, flexible polymer substrates.
These transistors have electrical properties suitable for driving the pixels in active matrix …

Thin-film transistors (TFTs) have in the past 10 years become the" rice" of the electronic flat
panel industry, just as silicon chips were earlier called the" rice," or staple, of the electronic …

The stability of amorphous-silicon/silicon-nitride thin-film transistors has been investigated
by measuring the time dependence of the source-drain current decay under a constant DC …

Esta dissertação resume o trabalho de investigação científica efectuado ao longo de cerca
de 5 anos, que abordou o estudo e optimização das condições de processamento de filmes …

High-voltage (> 100-V) and large-transconductance poly-Si thin-film transistors (TFTs) have
been fabricated on quartz substrates by the use of laser-recrystallized multiple-strip poly-Si …

The effect of traps at the Al2O3/CdSe interface on thin‐film transistors (TFT's) is
experimentally measured and mathematically modelled. These traps are shown to lead to a …

The thicknesses of the In layer in the composite In-Au source-drain contacts for CdSe thin-
film transistors (TFT's) are found to have significant effects on the performance of the …