Rapid progress in β-gallium oxide (β-Ga 2 O 3) material and device technologies has been
made in this decade, and its superior material properties based on the very large bandgap …

Gallium Oxide has undergone rapid technological maturation over the last decade, pushing
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …

Beta‐gallium oxide (β-Ga 2 O 3) has a history of research and development for over 70
years; however, it has attracted little attention as a semiconductor material for a long time …

This paper investigated the growth of (Al x Ga 1− x) 2 O 3 thin films on semi-insulating (010)
Ga 2 O 3 substrates over the entire Al composition range (0%< x≤ 100%) via metalorganic …

Single β-phase (100)(Al x Ga1–x) 2O3 thin films were successfully grown on (100) oriented
β-Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD). By …

Crack formation limits the growth of (Al x Ga 1− x) 2 O 3 epitaxial films on Ga 2 O 3
substrates. We employ first-principles calculations to determine the brittle fracture toughness …

Ultrawide-bandgap semiconductors are ushering in the next generation of high-power
electronics. The correct crystal orientation can make or break successful epitaxy of such …

Sn doping of (010) β-Ga 2 O 3 grown by conventional plasma-assisted molecular beam
epitaxy (PAMBE) and via metal oxide catalyzed epitaxy (MOCATAXY) using a supplied …

Abstract Gallium oxide (Ga 2 O 3) has recently emerged as a promising candidate for
applications in high-power and radio frequency electronics, deep-ultraviolet optoelectronics …

Single α-phase (Al x Ga 1− x) 2 O 3 thin films are grown on m-plane sapphire (α-Al 2 O 3)
substrates via metalorganic chemical vapor deposition. By systematically tuning the growth …