Lead selenide polycrystalline coatings sensitized using diffusion and ion beam methods for uncooled mid-infrared photodetection
H Yang, X Li, G Wang, J Zheng - Coatings, 2018 - mdpi.com
Polycrystalline lead selenide material that is processed after a sensitization technology
offers the additional physical effects of carrier recombination suppression and carrier …
offers the additional physical effects of carrier recombination suppression and carrier …
Impact of thickness on vacuum deposited PbSe thin films
V Arivazhagan, MM Parvathi, S Rajesh - Vacuum, 2012 - Elsevier
Lead Selenide thin films were prepared by vacuum evaporation technique with different
thickness ranges from 50 to 200 nm on glass substrates. The structural studies revealed that …
thickness ranges from 50 to 200 nm on glass substrates. The structural studies revealed that …
CdS/PbSe heterojunction for high temperature mid-infrared photovoltaic detector applications
n-CdS/p-PbSe heterojunction is investigated. A thin CdS film is deposited by chemical bath
deposition on top of epitaxial PbSe film by molecular beam epitaxy on Silicon. Current …
deposition on top of epitaxial PbSe film by molecular beam epitaxy on Silicon. Current …
Recent development on the uncooled mid-infrared PbSe detectors with high detectivity
Polycrystalline lead salt photoconductive (PC) detectors have been widely used for
applications in the 1-5μm spectral range because of their low cost, room temperature …
applications in the 1-5μm spectral range because of their low cost, room temperature …
Effects of sputtering power on properties of PbSe nanocrystalline thin films deposited by RF magnetron sputtering
W Feng, X Wang, H Zhou, F Chen - Vacuum, 2014 - Elsevier
PbSe nanocrystalline films were prepared by radio frequency (RF) magnetron sputtering
with different powers ranging from 40 to 100 W. The impact of RF power on the crystal …
with different powers ranging from 40 to 100 W. The impact of RF power on the crystal …
Continuous-wave mid-infrared photonic crystal light emitters at room temperature
Mid-infrared photonic crystal enhanced lead-salt light emitters operating under continuous-
wave mode at room temperature were investigated in this work. For the device, an active …
wave mode at room temperature were investigated in this work. For the device, an active …
Room temperature mid-infrared surface-emitting photonic crystal laser on silicon
We demonstrate a mid-infrared surface-emitting photonic crystal laser on silicon substrate
operating at room temperature. The active region consisting of PbSe/PbSrSe multiple …
operating at room temperature. The active region consisting of PbSe/PbSrSe multiple …
Mid-infrared surface-emitting photonic crystal microcavity light emitter on silicon
We describe an IV-VI semiconductor light emitter consisting of a PbSe/PbSrSe multiple
quantum well active region grown by molecular beam epitaxy on a patterned Si (111) …
quantum well active region grown by molecular beam epitaxy on a patterned Si (111) …
窄带隙IV-VI 族半导体PbTe (111) 的表面氧化及氧的热脱附机理
吴海飞， 吴珂， 张寒洁， 廖清， 何丕模 - 物理化学学报, 2012 - whxb.pku.edu.cn
利用X 射线光电子能谱(XPS), 扫描隧道显微镜(STM) 以及低能电子衍射(LEED), 对PbTe (111)
薄膜的表面氧化及氧的热脱附机理进行了研究. 结果表明: PbTe (111) 薄膜经500 V Ar+ …
薄膜的表面氧化及氧的热脱附机理进行了研究. 结果表明: PbTe (111) 薄膜经500 V Ar+ …
Numerical analysis of CdS/PbSe room temperature mid-infrared heterojunction photovoltaic detectors
Numerical analysis of a CdS/PbSe room-temperature heterojunction photovoltaic detector is
discussed as to provide guidelines for practical improvement, based on the previous …
discussed as to provide guidelines for practical improvement, based on the previous …