Unprecedented tools to image crystalline structure distributions in materials have been
made possible by recent advances in X-ray sources, X-ray optics and X-ray methods …

The ID01 beamline has been built to combine Bragg diffraction with imaging techniques to
produce a strain and mosaicity microscope for materials in their native or operando state. A …

Lately, germanium based materials attract a lot of interest as they can overcome some limits
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …

The application of high values of strain to Ge considerably improves its light emission
properties and can even turn it into a direct band gap semiconductor. Raman spectroscopy …

The quantification and localization of elastic strains and defects in crystals are necessary to
control and predict the functioning of materials. The X-ray imaging of strains has made very …

We investigate the temperature dependence of the Ge Raman mode strain–phonon
coefficient in Ge/Si heteroepitaxial layers. By analyzing the temperature‐dependent …

Ferroelectric materials are used in actuators or sensors because of their non-volatile
macroscopic electric polarization. GeTe is the simplest known diatomic ferroelectric …

The twin distribution in topological insulators Bi2Te3 and Bi2Se3 was imaged by electron
backscatter diffraction (EBSD) and scanning X-ray diffraction microscopy (SXRM). The …

Laue micro-diffraction and simultaneous rainbow-filtered micro-diffraction were used to
measure accurately the full strain tensor and the lattice orientation distribution at the sub …

Tensile germanium microstrips are candidate as gain material in Si-based light emitting
devices due to the beneficial effect of the strain field on the radiative recombination rate. In …