Wide bandgap devices in AC electric drives: Opportunities and challenges

AK Morya, MC Gardner, B Anvari, L Liu… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
Wide bandgap (WBG) device-based power electronics converters are more efficient and
lightweight than silicon-based converters. WBG devices are an enabling technology for …

Review of GaN HEMT applications in power converters over 500 W

CT Ma, ZH Gu - Electronics, 2019 - mdpi.com
Because of the global trends of energy demand increase and decarbonization, developing
green energy sources and increasing energy conversion efficiency are recently two of the …

Design and control of air supply system for PEMFC UAV based on dynamic decoupling strategy

D Zhao, L Xia, H Dang, Z Wu, H Li - Energy Conversion and Management, 2022 - Elsevier
The oxygen excess ratio (OER) and air pressure of the proton exchange membrane fuel cell
(PEMFC) cathode need to be relatively stable to improve energy conversion and utilization …

Advancements in energy efficient GaN power devices and power modules for electric vehicle applications: a review

RT Yadlapalli, A Kotapati, R Kandipati… - … Journal of Energy …, 2021 - Wiley Online Library
The third generation wide bandgap (WBG) semiconductor materials exhibit a prominent role
in various applications such as adapters, uninterrupted power supplies, smart grids, and …

A fast-switching integrated full-bridge power module based on GaN eHEMT devices

AB Jørgensen, S Bęczkowski… - … on Power Electronics, 2018 - ieeexplore.ieee.org
New packaging solutions and power module structures are required to fully utilize the
benefits of emerging commercially available wide bandgap semiconductor devices …

Bearing current and shaft voltage in electrical machines: a comprehensive research review

KB Tawfiq, M Güleç, P Sergeant - Machines, 2023 - mdpi.com
The reliability assessment of electric machines plays a very critical role in today's
engineering world. The reliability assessment requires a good understanding of electric …

A comparison review of the resonant gate driver in the silicon MOSFET and the GaN transistor application

B Sun, Z Zhang, MAE Andersen - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
The increasing transistor power loss brought by the high switching frequency places a limit
to the future high power density converter design. A review of resonant gate drivers is given …

Review on driving circuits for wide-bandgap semiconductor switching devices for mid-to high-power applications

CT Ma, ZH Gu - Micromachines, 2021 - mdpi.com
Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high
electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor …

Review of wide band-gap technology: power device, gate driver, and converter design

K Ravinchandra, TKS Freddy, JS Lee, KB Lee… - Journal of Power …, 2022 - Springer
This paper reviewed the state-of-the-art wide band-gap (WBG) technology from material
level to system level. The properties of semiconductor materials, ie, silicon carbide and …

EMI mitigation of GaN power inverter leg by local shielding techniques

PB Derkacz, JL Schanen, PO Jeannin… - … on Power Electronics, 2022 - ieeexplore.ieee.org
This article presents local shielding techniques applied to a half-bridge inverter leg with the
aim to reduce the common-mode (CM) current noise at converter's dc input. The research …